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pro vyhledávání: '"Slesazeck S"'
Autor:
Massarotto, M., Driussi, F., Affanni, A., Lancaster, S., Slesazeck, S., Mikolajick, T., Esseni, D.
Publikováno v:
In Solid State Electronics August 2022 194
Autor:
Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S.
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity
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To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compati
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Autor:
Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S.
Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate
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The use of ferroelectric negative capacitance (NC) has been proposed as a promising way to reduce the power dissipation in nanoscale devices [1]. According to single-domain (SD) Landau theory, a hysteresis-free NC state in a ferroelectric might be st
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Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only tw
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We report the experimental observation of hysteresis-free negative capacitance (NC) in thin ferroelectric Hf₀.₅Zr₀.₅O₂ (HZO) films through high-speed pulsed charge-voltage measurements. Hysteretic switching is suppressed by the addition of
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Akademický článek
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Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far
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Autor:
Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., Schroeder, U.
Publikováno v:
Journal of Applied Physics; 3/14/2021, Vol. 129 Issue 10, p1-21, 21p