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pro vyhledávání: '"Slesazeck, S"'
Autor:
Massarotto, M., Driussi, F., Affanni, A., Lancaster, S., Slesazeck, S., Mikolajick, T., Esseni, D.
Publikováno v:
In Solid State Electronics August 2022 194
Autor:
Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S.
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity
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To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compati
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Autor:
Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S.
Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate
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Autor:
Lancaster S; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany., Remillieux M; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.; École Supérieure de Chimie Physique Électronique de Lyon, 3 Rue Victor Grignard, Villeurbanne 69100, France., Engl M; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany., Havel V; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany., Silva C; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany., Wang X; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany., Mikolajick T; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.; Institute of Semiconductors and Microsystems, Technische Universität Dresden, Nöthnitzer Str 64, Dresden 01187, Germany., Slesazeck S; NaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Sep 25; Vol. 16 (38), pp. 51109-51117. Date of Electronic Publication: 2024 Sep 12.
Autor:
Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., Schroeder, U.
Publikováno v:
Journal of Applied Physics; 3/14/2021, Vol. 129 Issue 10, p1-21, 21p
The use of ferroelectric negative capacitance (NC) has been proposed as a promising way to reduce the power dissipation in nanoscale devices [1]. According to single-domain (SD) Landau theory, a hysteresis-free NC state in a ferroelectric might be st
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Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only tw
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We report the experimental observation of hysteresis-free negative capacitance (NC) in thin ferroelectric Hf₀.₅Zr₀.₅O₂ (HZO) films through high-speed pulsed charge-voltage measurements. Hysteretic switching is suppressed by the addition of
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