Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Slavko Amon"'
Autor:
Dejan Križaj, Slavko Amon, Tine Dolžan, Uroš Aljančič, Matej Možek, Drago Resnik, Borut Pečar, Danilo Vrtačnik
Publikováno v:
Sensors, Vol 13, Iss 3, Pp 3092-3108 (2013)
A novel design for a strip-type microthrottle pump with a rectangular actuator geometry is proposed, with more efficient chip surface consumption compared to existing micropumps with circular actuators. Due to the complex structure and operation of t
Externí odkaz:
https://doaj.org/article/b86e945e74fc41f6bb37b825e093b5d9
Publikováno v:
Microelectronic Engineering. 96:29-35
Al thin films deposited by DC magnetron sputtering from two different target compositions Al-1%Si and Al-1%Si-0.5%Cu on n-type Si (100) and on SiO"2 substrates were investigated. Surface morphology was studied as a function of deposition temperature
Publikováno v:
Sensors and Actuators A: Physical. 180:127-136
Catalytic methanol micro combustor was built by micromachining of (1 0 0) silicon and Borofloat 33 (Schott) glass. Pt/CeO 2 catalyst precursor was prepared by wet impregnation of CeO 2 , synthesized by hard template method from the solution of dihydr
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 620:557-562
Investigation of cutting edge properties in edge-on silicon microstrip detector has been performed. An advanced approach for reducing dead layer thickness has been introduced. It consists of standard wafer sawing through entire wafer thickness, follo
Publikováno v:
Vacuum. 84:224-227
Multilayered Au/Ni/Al thin film metallization deposited by DC sputtering on n+Si substrates has been investigated. AES depth profiling was performed to reveal the concentration depth profiles of the Au/Ni/Al multilayers before and after annealing at
Publikováno v:
Thin Solid Films. 516:7497-7504
Direct current sputtered Ti/NiV/Ag thin film metallization scheme on n+Si substrate was studied to reveal the nature of interface structure and adhesion related mechanisms. Ti/NiV/Ag scheme is usually applied when solderable backside contact is requi
Publikováno v:
Microelectronic Engineering. 85:1603-1607
Due to insufficient adhesion of sputtered Ti/NiV/Ag metallization scheme on n^+Si substrate when annealed below 550^oC, investigation was focused on the influence of process parameters on adhesion properties. Adhesion between metallic stack and Si su
Publikováno v:
Sensors and Actuators A: Physical. 141:101-108
Design and realization of a digitally controlled closed loop calibration system for smart sensors, capable of self-learning, is reported. Closed loop design enables analysis of sensor properties and optimization of calibration procedure. Dedicated so
Publikováno v:
Bioelectrochemistry. 71:164-171
Electroporation is a phenomenon during which exposure of a cell to high voltage electric pulses results in a significant increase in its membrane permeability. Aside from the fact that after the electroporation the cell membrane becomes more permeabl
Publikováno v:
Vacuum. 82:162-165
The interface structure and the adhesion of direct current (DC) sputtered Ti/Ni/Ag thin film metallization on n + Si substrate has been investigated. It is shown that beside the chemical preparation of the Si surface prior to sputtering also thermal