Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Slaven Moro"'
Autor:
Andreja Radosevic, Marija P. Bezulj, Hasan Redzovic, Aleksandra Smiljanic, Mihailo Vesovic, Slaven Moro, Strahinja Jankovic
Publikováno v:
IEEE Transactions on Aerospace and Electronic Systems. 56:2616-2627
Satellite backbone networks provide a viable means of establishing broadband connectivity for remote, sparsely populated areas. In addition, satellite communication systems are well suited for airborne, maritime, and disaster relief environments. Tec
Assessment of gamma and proton radiation effects on 100 Gbps commercial coherent optical transceiver
Publikováno v:
International Conference on Space Optics — ICSO 2018.
The Acacia AC100M is a 100 Gigabits per second (Gbps) commercial, coherent optical transceiver module with digital signal processing (DSP) application specific integrated circuit (ASIC). The AC100M was characterized with noise-loaded input to simulat
Autor:
Alexa Aguilar, Randall Milanowski, Raichelle Aniceto, Slaven Moro, Neal Nicholson, Eric D. Miller, Steve McClure, Daniel Greene, Kerri Cahoy
Publikováno v:
Free-Space Laser Communications XXXI.
We assess the viability of a state-of-the-art 100G/200G commercial optical coherent DSP ASIC (16 nm FinFET CMOS technology) for space applications through heavy ion testing to (1) screen for destructive SELs and (2) observe for nondestructive heavy i
Autor:
Norman Hall, Bert Vermeire, Josh Shields, Slaven Moro, Randall Milanowski, Raichelle Aniceto, Kerri Cahoy
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed V t increase of ∼ 3 V for biased ON devices and increase of ∼ 1 V for biased OFF devices. The R ds_on did not degrade with dose.
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
We report 60Co gamma radiation testing of a Kaman KD-5100 position measuring system to a total ionizing dose of 10 kRad(Si) at a rate of 5 mRad(Si)/s.
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 \times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We provide proton radiation test results for three commercial analog integrated circuits that have no space-qualified equivalents. Results suggest the components are suitable for some space applications. Additional testing for Enhanced Low Dose Rate
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.
Autor:
Raichelle Aniceto, Slaven Moro, Randall Milanowski, Christopher Isabelle, Kerri Cahoy, Bert Vermeire, Norman Hall
Publikováno v:
Prof. Cahoy via Barbara Williams
© 2017 IEEE. Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f5767009a6dacfc054517d7eed386c3
https://hdl.handle.net/1721.1/137994
https://hdl.handle.net/1721.1/137994
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10−4 cm2/device.