Výsledky vyhledávání - "Slaoui Abdelilah"

Akademický článek

Hf-based high-k materials for Si nanocrystal floating gate memories

Autor: Sahu Bhabani, Slaoui Abdelilah, Khomenkova Larysa, Gourbilleau Fabrice

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 172 (2011)

Abstract Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunne

Externí odkaz: https://doaj.org/article/8aee3fe48fdb4469b5ac18439452ebeb

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Akademický článek

Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films

Autor: Sahu Bhabani, Delachat Florian, Slaoui Abdelilah, Carrada Marzia, Ferblantier Gerald, Muller Dominique

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 178 (2011)

Abstract In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:

Externí odkaz: https://doaj.org/article/621ea0933fe84a8e8ca996cbd47fbbcd

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Akademický článek

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Autor: Gloux Florence, Groenen Jesse, Bonafos Caroline, Lhostis Sandrine, Sahu Bhabani, Slaoui Abdelilah, Carrada Marzia, Muller Dominique

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 177 (2011)

Abstract Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable b

Externí odkaz: https://doaj.org/article/59a457eea7554e74a6482ecd9bd03c8c

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