Zobrazeno 1 - 10
of 401
pro vyhledávání: '"Skukan, N."'
Autor:
Tchernij, S. Ditalia, Herzig, T., Forneris, J., Küpper, J., Pezzagna, S., Traina, P., Moreva, E., Degiovanni, I. P., Brida, G., Skukan, N., Genovese, M., Jakšić, M., Meijer, J., Olivero, P.
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-
Externí odkaz:
http://arxiv.org/abs/1708.01467
Autor:
Forneris, J., Tchernij, S. Ditalia, Traina, P., Moreva, E., Skukan, N., Jakšić, M., Grilj, V., Croin, L., Amato, G., Degiovanni, I. P., Naydenov, B., Jelezko, F., Genovese, M., Olivero, P.
Publikováno v:
Phys. Rev. Applied 10, 014024 (2018)
Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the act
Externí odkaz:
http://arxiv.org/abs/1706.07935
Characterization of ion beam induced polarization in scCVD diamond detectors using a microbeam probe
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 October 2021 504:21-32
Autor:
Picollo, F., Olivero, P., Bellotti, F., Pastuović, Ž., Skukan, N., Giudice, A. Lo, Amato, G., Jakšić, M., Vittone, E.
Publikováno v:
Diamond and Related Materials 19 (5-6), 466-469 (2010)
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero e
Externí odkaz:
http://arxiv.org/abs/1609.06176
Autor:
Bosia, F., Olivero, P., Vittone, E., Picollo, F., Giudice, A. Lo, Jaksic, M., Skukan, N., Giuntini, L., Massi, M., Calusi, S., Vannoni, M., Lagomarsino, S., Sciortino, S.
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 268, 2991-2995 (2010)
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to e
Externí odkaz:
http://arxiv.org/abs/1608.08111
Autor:
Olivero, P., Forneris, J., Gamarra, P., Jaksic, M., Giudice, A. Lo, Manfredotti, C., Pastuovic, Z., Skukan, N., Vittone, E.
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 269, 2350-2354 (2011)
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias volt
Externí odkaz:
http://arxiv.org/abs/1608.08106
Autor:
Olivero, P., Amato, G., Bellotti, F., Budnyk, O., Colombo, E., Jaksic, M., Giudice, A. Lo, Manfredotti, C., Pastuovic, Z., Picollo, F., Skukan, N., Vannoni, M., Vittone, E.
Publikováno v:
Diamond and Related Materials 18, 870-876 (2009)
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows
Externí odkaz:
http://arxiv.org/abs/1608.07427
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 267, 2197-2202 (2009)
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps w
Externí odkaz:
http://arxiv.org/abs/1608.08567
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 269, 2340-2344 (2011)
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micr
Externí odkaz:
http://arxiv.org/abs/1608.07595
Autor:
Forneris, J., Grilj, V., Jaksic, M., Giudice, A. Lo, Olivero, P., Picollo, F., Skukan, N., Verona, C., Verona-Rinati, G., Vittone, E.
Publikováno v:
Nuclear Instruments and Methods in Physics Research B 306, 181-185 (2013)
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state
Externí odkaz:
http://arxiv.org/abs/1608.07590