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pro vyhledávání: '"Skowronski, Marek"'
A finite element model consisting of a conducting filament with or without a gap was used to reproduce behavior of TaO$_x$-based resistive switching devices. The specific goal was to explore the range of possible filament parameters such a filament d
Externí odkaz:
http://arxiv.org/abs/2411.14970
Non-volatile memory devices have received a lot of interest in both industry and academia in the last decade. Transition metal oxide-based memories offer potential applications as universal memory and artificial synapses. Here we focus on the one-tim
Externí odkaz:
http://arxiv.org/abs/2111.06215
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application of the el
Externí odkaz:
http://arxiv.org/abs/2004.06571
Publikováno v:
Soft Computing 19(12), 3599-3619 (2014)
In this paper Hybrid Ant Colony Optimization (HAntCO) approach in solving Multi--Skill Resource Constrained Project Scheduling Problem (MS--RCPSP) has been presented. We have proposed hybrid approach that links classical heuristic priority rules for
Externí odkaz:
http://arxiv.org/abs/1603.08538
Publikováno v:
J. Vac. Sci. Technol. A 33, 031402 (2015)
The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prior to fracture. In both cases, SrO- and TiO2-terminated terraces were p
Externí odkaz:
http://arxiv.org/abs/1509.04526
Publikováno v:
Phys. Rev. B 91, 205408 (2015)
The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV abov
Externí odkaz:
http://arxiv.org/abs/1501.03523
Autor:
Yu, Yiqi, Skowronski, Marek
Publikováno v:
Journal of Applied Physics; 1/28/2023, Vol. 133 Issue 4, p1-10, 10p
Publikováno v:
In Applied Soft Computing Journal January 2018 62:1-14
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