Zobrazeno 1 - 10
of 2 382
pro vyhledávání: '"Skorupa, W"'
Autor:
Weiss, C., Schnabel, M., Prucnal, S., Hofmann, J., Reichert, A., Fehrenbach, T., Skorupa, W., Janz, S.
Publikováno v:
Journal of Applied Physics, vol. 120, p. 105103, 2016
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an ab
Externí odkaz:
http://arxiv.org/abs/2005.07406
Autor:
Wang, Mao, Debernardi, A., Berencén, Y., Heller, R., Xu, Chi, Yuan, Ye, Xie, Yufang, Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Prucnal, S., Zhou, Shengqiang
Publikováno v:
Phys. Rev. Applied 11, 054039 (2019)
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibriu
Externí odkaz:
http://arxiv.org/abs/1809.06055
Autor:
Wang, Mao, Berencén, Y., García-Hemme, E., Prucnal, S., Hübner, R., Yuan, Ye, Xu, Chi, Rebohle, L., Böttger, R., Heller, R., Schneider, H., Skorupa, W., Helm, M., Zhou, Shengqiang
Publikováno v:
Phys. Rev. Applied 10, 024054 (2018)
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature
Externí odkaz:
http://arxiv.org/abs/1809.00983
Autor:
Rebohle, L., Quade, A., Schumann, T., Blaschke, D., Hübner, R., Heller, R., Foest, R., Schäfer, J., Skorupa, W.
Publikováno v:
In Thin Solid Films 1 July 2022 753
Autor:
Liu, F., Prucnal, S., Berencén, Y., Zhang, Z., Yuan, Y., Liu, Y., Heller, R., Boettger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S.
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport me
Externí odkaz:
http://arxiv.org/abs/1707.09207
Publikováno v:
J. Phys. D: Appl. Phys. 49, 245104 (2016)
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid p
Externí odkaz:
http://arxiv.org/abs/1608.05551
Autor:
Prucnal, S., Gao, K., Skorupa, I., Rebohle, L., Vines, L., Schmidt, H., Khalid, M., Wang, Y., Weschke, E., Skorupa, W., Grenzer, J., Huebner, R., Helm, M., Zhou, S.
Publikováno v:
Phys. Rev. B, 92, 224407 (2015)
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to unde
Externí odkaz:
http://arxiv.org/abs/1510.09017
Autor:
Yuan, Y., Wang, Y., Gao, K., Khalid, M., Wu, C., Zhang, W., Munnik, F., Weschke, E., Baehtz, C., Skorupa, W., Helm, M., Zhou, S.
Publikováno v:
J. Phys. D: Appl. Phys. 48, 235002 (2015)
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.1
Externí odkaz:
http://arxiv.org/abs/1506.01537
Autor:
Zhou, S., Liu, F., Prucnal, S., Gao, K., Khalid, M., Baehtz, C., Posselt, M., Skorupa, W., Helm, M.
Publikováno v:
Scientific Reports 5, 8329 (2015)
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by
Externí odkaz:
http://arxiv.org/abs/1501.03953
Autor:
Khalid, M., Gao, Kun, Weschke, E., Huebner, R., Baehtz, C., Gordan, O., Salvan, G., Zahn, D. R. T., Skorupa, W., Helm, M., Zhou, Shengqiang
Publikováno v:
J. Appl. Phys. 117, 043906 (2015)
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin
Externí odkaz:
http://arxiv.org/abs/1501.03597