Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase.

Autor: Alrifai, L., Skopin, E. V., Guillaume, N., Gonon, P., Bsiesy, A.

Publikováno v: Applied Physics Letters; 7/17/2023, Vol. 123 Issue 3, p1-6, 6p

Sub-10-nm ferroelectric Gd-doped HfO2 layers

Autor: Skopin, E. V., Guillaume, N., Alrifai, L., Gonon, P., Bsiesy, A.

Publikováno v: Appl. Phys. Lett. 120, 172901 (2022)

Sub-10 nm thick gadolinium-doped hafnia (Gd:HfO2) layers were grown in metal–insulator–metal (TiN/Gd:HfO2/TiN) stacks using a plasma-enhanced atomic layer deposition process. Thermally annealed Gd:HfO2 layers with a thickness of 8.8, 6.6, and 4.4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::053c240660ce2ed8b534bdbb9261f10c
https://doi.org/10.1063/5.0088505

In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As

Autor: Skopin, E., Rapenne, L., Deschanvres, J., Renevier, H., Blanquet, E., Ciatto, G., Pithan, L., Fong, D., Richard, M.-I.

Publikováno v: Physical Review Materials
Physical Review Materials, American Physical Society, 2020, 4 (4), ⟨10.1103/PhysRevMaterials.4.043403⟩
Physical Review Materials, 2020, 4 (4), ⟨10.1103/PhysRevMaterials.4.043403⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::33e52f22f95b836f222eab6a9e1c3162
https://hal.archives-ouvertes.fr/hal-02994857/document

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In situ X-ray studies during the early stage of ZnO Atomic Layer Deposition on InGaAs

Autor: Skopin, E, Rapenne, L., Roussel, H., Deschanvres, J.-L., Crisci, A., Blanquet, E., Ciatto, G., Fong, D., Richard, M.-I., Renevier, Hubert

Publikováno v: Rayons X & Matière
Rayons X & Matière, Nov 2017, Villeneuve d'Ascq, France

National audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5b9f59a29acd3dd731034b1a7777dc9f
https://hal.science/hal-02016916