Effect of TiN electrodes and Gd-doping on HfO2 structural properties.

Autor: Abdallah, M. M., Skopin, E. V., Fillot, F., Constantin, D., Abusaa, M., Bsiesy, A.

Publikováno v: Journal of Applied Physics; 12/21/2024, Vol. 136 Issue 23, p1-7, 7p

Quantitative in situ synchrotron X-ray analysis of the ALD/MLD growth of transition metal dichalcogenide TiS 2 ultrathin films.

Autor: Yadav AK; Synchrotron SOLEIL, Beamline SIRIUS, Saint-Aubin, F-91192, Gif sur Yvette, France. gianluca.ciatto@synchrotron-soleil.fr., Ma W; IPVF (UMR 9006), Institut Photovoltaïque d'Ile-de-France, F-91120 Palaiseau, France., Abi Younes P; Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble, France.; Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France., Ciatto G; Synchrotron SOLEIL, Beamline SIRIUS, Saint-Aubin, F-91192, Gif sur Yvette, France. gianluca.ciatto@synchrotron-soleil.fr., Gauthier N; Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France., Skopin E; Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble, France., Quadrelli EA; Université de Lyon, IRCELYON (UMR 5256, CNRS and Université de Lyon1), F-69100 Villeurbanne, France., Schneider N; IPVF (UMR 9006), Institut Photovoltaïque d'Ile-de-France, F-91120 Palaiseau, France., Renevier H; Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble, France.

Publikováno v: Nanoscale [Nanoscale] 2024 Jan 25; Vol. 16 (4), pp. 1853-1864. Date of Electronic Publication: 2024 Jan 25.

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Sub-10-nm ferroelectric Gd-doped HfO2 layers

Autor: Skopin, E. V., Guillaume, N., Alrifai, L., Gonon, P., Bsiesy, A.

Publikováno v: Appl. Phys. Lett. 120, 172901 (2022)

Sub-10 nm thick gadolinium-doped hafnia (Gd:HfO2) layers were grown in metal–insulator–metal (TiN/Gd:HfO2/TiN) stacks using a plasma-enhanced atomic layer deposition process. Thermally annealed Gd:HfO2 layers with a thickness of 8.8, 6.6, and 4.4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::053c240660ce2ed8b534bdbb9261f10c
https://doi.org/10.1063/5.0088505

Sub-10-nm ferroelectric Gd-doped HfO2 layers.

Autor: Skopin, E. V., Guillaume, N., Alrifai, L., Gonon, P., Bsiesy, A.

Publikováno v: Applied Physics Letters; 4/25/2022, Vol. 120 Issue 17, p1-5, 5p