Zobrazeno 1 - 10
of 1 439
pro vyhledávání: '"Skolnick, M"'
Autor:
Hallett, D., Wiercinski, J., Hallacy, L., Sheldon, S., Dost, R., Martin, N., Fenzl, A., Farrer, I., Verma, A., Cygorek, M., Gauger, E. M., Skolnick, M. S., Wilson, L. R.
We report the measurement of collective emission from a pair of independently tuneable InAs quantum dots embedded in a nanophotonic waveguide. A split diode structure allows independent electrical control of the quantum dot transition energies over a
Externí odkaz:
http://arxiv.org/abs/2410.17890
Autor:
Hallacy, L., Martin, N. J., Mehrabad, M. Jalali, Hallett, D., Chen, X., Dost, R., Foster, A., Brunswick, L., Fenzl, A., Clarke, E., Patil, P. K., Fox, A. M, Skolnick, M. S., Wilson, L. R.
The integration of topology into photonics has generated a new design framework for constructing robust and unidirectional waveguides, which are not feasible with traditional photonic devices. Here, we overcome current barriers to the successful inte
Externí odkaz:
http://arxiv.org/abs/2408.08750
Autor:
Whittaker, C. E., Isoniemi, T., Lovett, S., Walker, P. M., Kolodny, S., Kozin, V., Iorsh, I. V., Farrer, I., Ritchie, D. A., Skolnick, M. S., Krizhanovskii, D. N.
Publikováno v:
Appl. Phys. Lett. 119, 181101 (2021)
We report the observation of band gaps for low loss exciton-polaritons propagating outside the light cone in GaAs-based planar waveguides patterned into two-dimensional photonic crystals. By etching square lattice arrays of shallow holes into the upp
Externí odkaz:
http://arxiv.org/abs/2308.15185
Autor:
Martin, N. J, Mehrabad, M. Jalali, Chen, X., Dost, R., Nussbaum, E., Hallett, D., Hallacy, L., Foster, A., Clarke, E., Patil, P. K., Hughes, S., Hafezi, M., Fox, A. M, Skolnick, M. S., Wilson, L. R.
Chirality in integrated quantum photonics has emerged as a promising route towards achieving scalable quantum technologies with quantum nonlinearity effects. Topological photonic waveguides, which utilize helical optical modes, have been proposed as
Externí odkaz:
http://arxiv.org/abs/2305.11082
Autor:
Benimetskiy, F. A., Yulin, A., Mikhin, A. O., Kravtsov, V., Iorsh, I., Skolnick, M. S., Shelykh, I. A., Krizhanovskii, D. N., Samusev, A.
Recently reported large values of exciton-polariton nonlinearity of transition metal dichalcogenide (TMD) monolayers coupled to optically resonant structures approach the values characteristic for GaAs-based systems in the regime of strong light-matt
Externí odkaz:
http://arxiv.org/abs/2205.03944
Autor:
Mehrabad, M. Jalali, Foster, A. P., Martin, N. J., Dost, R., Clarke, E., Patil, P. K., Skolnick, M. S., Wilson, L. R.
The integration of quantum emitters within topological nano-photonic devices opens up new avenues for the control of light-matter interactions at the single photon level. Here, we realise a spin-dependent, chiral light-matter interface using individu
Externí odkaz:
http://arxiv.org/abs/2110.07277
Spin-dependent, directional light-matter interactions form the basis of chiral quantum networks. In the solid state, quantum emitters commonly possess circularly polarised optical transitions with spin-dependent handedness. We demonstrate numerically
Externí odkaz:
http://arxiv.org/abs/2108.01462
Autor:
Skolnick, M., Torquato, S.
Publikováno v:
In Acta Materialia 15 April 2024 268
Autor:
Whittaker, C. E., Dowling, T., Nalitov, A. V., Yulin, A. V., Royall, B., Clarke, E., Skolnick, M. S., Shelykh, I. A., Krizhanovskii, D. N.
The concept of gauge fields plays a significant role in many areas of physics from particle physics and cosmology to condensed matter systems, where gauge potentials are a natural consequence of electromagnetic fields acting on charged particles and
Externí odkaz:
http://arxiv.org/abs/2010.05347
Autor:
Kravtsov, V., Liubomirov, A. D., Cherbunin, R. V., Catanzaro, A., Genco, A., Gillard, D., Alexeev, E. M., Ivanova, T., Khestanova, E., Shelykh, I. A., Iorsh, I. V., Tartakovskii, A. I., Skolnick, M. S., Krizhanovskii, D. N.
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of
Externí odkaz:
http://arxiv.org/abs/2005.13306