Passivating contacts for crystalline silicon solar cells

Autor: Bas W. H. van de Loo, Sjoerd Smit, Lachlan E. Black, Jimmy Melskens, Wilhelmus M. M. Kessels, Bart Macco

Publikováno v: IEEE Journal of Photovoltaics, 8(2), 373-388. IEEE Electron Devices Society

To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db8a3101487da80094c5cab9fa7c4060
http://www.scopus.com/inward/record.url?scp=85042114997&partnerID=8YFLogxK

Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells

Autor: Stefan Bordihn, Sjoerd Smit, M.S. Hanssen, D. Garcia-Alonso, Wilhelmus M. M. Kessels

Publikováno v: Solar Energy Materials and Solar Cells, 120(Part A), 376-382. Elsevier

The goal of this work is to investigate selective hole contacts for crystalline silicon solar cells that are highly transparent, passivate the silicon surface and have low contact resistance. Stacks of Al 2 O 3 and ZnO films are suggested for this pu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac44072452b48bf1c549cab00e52a1f5
https://doi.org/10.1016/j.solmat.2013.06.016

Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Autor: W. M. M. Erwin Kessels, Bart Macco, Bas W. H. van de Loo, Jimmy Melskens, Sjoerd Smit

Publikováno v: 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016, 2016-November, 2473-2478
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 1360-1365
STARTPAGE=1360;ENDPAGE=1365;TITLE=2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f848e953bc1458fdd6c4a702a350f576
https://research.tue.nl/nl/publications/8a8966a6-8d6a-409c-8ae3-e2ea0716fb5b

Optical modeling of plasma-deposited ZnO films : electron scattering at different length scales

Autor: JW Jan-Willem Weber, Bas W. H. van de Loo, K. Sharma, Wilhelmus M. M. Kessels, Sjoerd Smit, Mariadriana Creatore, Harm C. M. Knoops, M. V. Ponomarev

Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 33, 021509-1/13. AVS Science and Technology Society

In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7abf4a2c21aa958253b758a75db0adb
https://research.tue.nl/nl/publications/e255b139-cb16-4340-a87e-f7bb5c778585

Identifying parasitic current pathways in CIGS solar cells by modelling dark JV response

Autor: Sjoerd Smit, B. L. Williams, Mariadriana Creatore, Ruud E. I. Schropp, N. J. Bakkers, Wilhelmus M. M. Kessels, B. Kniknie

Publikováno v: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, 1729-1734
STARTPAGE=1729;ENDPAGE=1734;TITLE=2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

The presence of undetermined shunt pathways in CIGS solar cells can be severely limiting to the reproducibility of individual cell efficiency, both at lab-scale, and particularly in a roll-to-roll process. Here, a general model that describes the dar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c4e5afc69199ea2a48e0653dd782227
https://research.tue.nl/en/publications/7bb076ef-d31d-493b-af2c-a519bcfb0ce9