Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sjc Samuel Mauger"'
Publikováno v:
Journal of Physics : Condensed Matter, 28(28):284002, 1-7. Institute of Physics
An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0984de4169382424eaff1c26928a3c5d
https://research.tue.nl/en/publications/d594c2ef-ed34-4c5e-8c44-f00b6501897f
https://research.tue.nl/en/publications/d594c2ef-ed34-4c5e-8c44-f00b6501897f
Autor:
Nidhi Parashar, Bruce W. Wessels, Sjc Samuel Mauger, C. Feeser, Juanita Bocquel, PM Paul Koenraad
Publikováno v:
Applied Physics Letters, 107(22):222102, 1-5. American Institute of Physics
We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35d932ad0adfaba298863c9636e3c64a
https://research.tue.nl/nl/publications/37f65d5b-31d3-4a55-81cb-547f3e1641e0
https://research.tue.nl/nl/publications/37f65d5b-31d3-4a55-81cb-547f3e1641e0
Autor:
Sylvain Tricot, Hervé Folliot, Mikhail Nestoklon, Pascal Turban, Alejandro R. Goñi, K. Pereira da Silva, MY Alonso, A. Le Corre, Nicolas Bertru, Jacky Even, Tony Rohel, Olivier Durand, J.M. Jancu, C. Robert, Sjc Samuel Mauger, Andrea Balocchi, Xavier Marie, Mathieu Perrin, P. Barate, Charles Cornet, T. Nguyen Thanh, Laurent Pedesseau, PM Paul Koenraad
Publikováno v:
IEEE Xplore Digital Library
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Web of Science
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Web of Science
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
ISBN: 978-1-4799-5729-3; International audience; The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a319cd410772dafbdc17891f6f5259d
https://hal.science/hal-01114877
https://hal.science/hal-01114877
Autor:
Tony Rohel, PM Paul Koenraad, Olivier Durand, Charles Cornet, Jacky Even, Xavier Marie, A. R. Goi, K. Pereira da Silva, T. Nguyen Thanh, Andrea Balocchi, S. Tricot, N. Bertru, A. Le Corre, Sjc Samuel Mauger, J. M. Jancu, Mathieu Perrin, P. Barate, Maria Isabel Alonso, Hervé Folliot, Pascal Turban, Cédric Robert
Publikováno v:
25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Compound semiconductors week, IPRM, 2013
Compound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe, 1-2
STARTPAGE=1;ENDPAGE=2;TITLE=The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe
25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Compound semiconductors week, IPRM, 2013
Compound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe, 1-2
STARTPAGE=1;ENDPAGE=2;TITLE=The 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe
Poster MoPI-7; International audience; The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ba69265e97cb8a41a97c57d0f2dfc3e
https://doi.org/10.1109/iciprm.2013.6562587
https://doi.org/10.1109/iciprm.2013.6562587
Publikováno v:
Applied Physics Letters, 105(23):232405. American Institute of Physics
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The topographic images reveal that the small clusters have the same zinc-blende crystal structure as the host material, while the larger clusters grow in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcf0ebe7b84f88841ce89068aaf96540
https://doi.org/10.1063/1.4904097
https://doi.org/10.1063/1.4904097