Zobrazeno 1 - 10
of 363
pro vyhledávání: '"Sizov F"'
The specific contact resistance $\rho_c$ of Cr/p-Hg$_{0.72}$Cd$_{0.28}$Te and Cr/p-CdTe/p-Hg$_{0.72}$Cd$_{0.28}$Te heterointerfaces, which were formed by deposition of Cr films at room temperatures on the surfaces of semiconductors, was studied by th
Externí odkaz:
http://arxiv.org/abs/2411.01003
Autor:
Reva V. P., Korinets S. V., Golenkov A. G., Sapon S. V., Torchinsky A. M., Zabudsky V. V., Sizov F. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 9-14 (2018)
The sensitivity and basic electrical characteristics of the developed direct illumination matrices with charge-coupled devices and electronic multiplication were investigated at room temperatures and low illumination. Photomatrices of 576×288 and 64
Externí odkaz:
https://doaj.org/article/77e12de1ede04889bc2fb5a06e71cb2a
Autor:
Tsybrii Z. F., Andreeva K. V., Apatska M. V., Bunchuk S. G., Vuichyk M. V., Golenkov O. G., Dmytruk N. V., Zabudsky V. V., Lysiuk I. O., Svezhentsova K. V., Smolii M. I., Sizov F. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 8-13 (2017)
The authors have developed the topology and technological fabrication route for discrete photodiodes (Θ = 0,5—1,5 mm) for the mid wavelength infrared (MWIR) range, based on the mercury-cadmium-telluride (MCT) epitaxial layers. The paper describes
Externí odkaz:
https://doaj.org/article/91e89a6ef77d455e8f5f0c4253698545
Autor:
Reva V. P., Korinets S. V., Golenkov A. G., Sapon S. V., Torchinsky A. M., Zabudsky V. V., Sizov F. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 33-37 (2017)
Electron multiplication charge coupled devices (EMCCD) technology is an innovation first introduced slightly more than a decade ago. The EMCCD is an image sensor that is capable of detecting an isolated photon without an image intensifier. It is achi
Externí odkaz:
https://doaj.org/article/7673daa3239f45cf99ce5d794aedfe4f
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 25-28 (2011)
The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the paramete
Externí odkaz:
https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac
Autor:
Sizov, F., Tsybrii, Z., Rudenko, E., Korotash, I., Vuichyk, M., Svezhentsova, K., Polotskiy, D.
Publikováno v:
In Vacuum July 2024 225
Autor:
Sizov, F., Tsybrii, Z., Rudenko, E., Svavil’nyi, M., Kyrychok, T., Kolomys, O., Vuichyk, M., Svezhentsova, K., Skoryk, M., Strelchuk, V., Maziar, D., Gudymenko, O., Polotskiy, D., Panarin, V., Korotash, I.
Publikováno v:
In Nano-Structures & Nano-Objects July 2023 35
Publikováno v:
In Materials Science in Semiconductor Processing 15 March 2021 124
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves Journal of Infrared, Millimeter and Terahertz Waves, Volume 35, Issue 9, pp 703-719 (2014)
The development of THz multielement uncooled imagers based on focal plane arrays (FPAs) requires an optimization of the system parameters to achieve a homogeneous sensitivity of the array elements. Results of numerical simulation of the eight-element
Externí odkaz:
http://arxiv.org/abs/1511.07807