Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Siyoun Lee"'
Publikováno v:
IEEE Access, Vol 11, Pp 60758-60762 (2023)
The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure. This r
Externí odkaz:
https://doaj.org/article/e16af94ec46e42ccbb240aac17e8f33a
Autor:
Siyoun Lee
Publikováno v:
Journal of Region & Culture. 5:85-101