Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Siwu Shao"'
Autor:
Xiaohua Zhu, Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafe
Externí odkaz:
https://doaj.org/article/bf064b19e6cb4649a285136b8b46807f
Autor:
Shiyu LI, Kang AN, Siwu SHAO, Yabo HUANG, Jianjun ZHANG, Yuting ZHENG, Liangxian CHEN, Junjun WEI, Jinlong LIU, Chengming LI
Publikováno v:
Jin'gangshi yu moliao moju gongcheng, Vol 42, Iss 1, Pp 61-68 (2022)
The orthogonal experiment of laser planarization of CVD polycrystalline diamond film was carried out, and the morphology was analyzed by using scanning electron microscope (SEM). The surface roughness Ra, the surface roughness Sa and the taper of ker
Externí odkaz:
https://doaj.org/article/1f6d4e4a4326495f98a8b6ef7b868447
Autor:
Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055114-055114-6 (2020)
Here, thermal stabilities for Ohmic contact properties of Pt, Au, and Pd on the same hydrogen-terminated diamond (H-diamond) epitaxial layer are investigated. A long-term annealing process is performed with an annealing temperature and time of 400 °
Externí odkaz:
https://doaj.org/article/53c8ec78cd6a454d95d9ad8df41dcd8a
Autor:
Kang An, Shiyu Li, Siwu Shao, Peng Liu, Jinlong Liu, Liangxian Chen, Junjun Wei, Yuting Zheng, Qing Liu, Chengming Li
Publikováno v:
Ceramics International. 48:17942-17949
Autor:
Xiaohua Zhu, Siwu Shao, Yuhao Chang, Runming Zhang, Sylvia Yuk Yee Chung, Yu Fu, Te Bi, Yabo Huang, Kang An, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Publikováno v:
IEEE Electron Device Letters. 43:789-792
Autor:
Kang An, Jinglong Liu, Wei Junjun, Yabo Huang, Siwu Shao, Chengming Li, Chen Liangxian, Yuechan Kong, Jia Xin
Publikováno v:
Journal of Materials Science. 56:6903-6911
The fabrication of GaN-on-diamond structure by the process of diamond growth on GaN technology is becoming more and more attractive for high-power GaN devices. However, due to the high-temperature steps employed during the GaN epitaxial layer transfe
Autor:
Jia Xin, Liu Jinlong, Zhina Qi, Yabo Huang, Wei Junjun, Chen Liangxian, Lishu Wu, Siwu Shao, Yuechan Kong, Kang An, Chengming Li
Publikováno v:
Journal of Materials Research. 35:508-515
The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat di
Autor:
Zhao Yun, Tu Juping, Siwu Shao, Chen Liangxian, Wei Junjun, Liu Jinlong, Xiaohua Zhu, Chengming Li
Publikováno v:
Journal of Materials Research. 35:527-536
To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperatur
Autor:
Xiaohua Zhu, Siyi Chan, Xiaolu Yuan, Juping Tu, Siwu Shao, Yuwei Jia, Liangxian Chen, Junjun Wei, Jinlong Liu, Hiroshi Kawarada, Chengming Li
Publikováno v:
Diamond and Related Materials. 130:109525