Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sivanarayanamoorthy Sivoththaman"'
Publikováno v:
Solar Energy Materials and Solar Cells. 65:249-259
An overview is given concerning current industrial technologies, near future improvements and medium-term developments in the field of industrially viable crystalline silicon terrestrial solar cell fabrication (without concentration).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc4f6f49a637dc218bbd764bdb606f5
https://doi.org/10.1016/s0927-0248(00)00100-8
https://doi.org/10.1016/s0927-0248(00)00100-8
Autor:
Sivanarayanamoorthy Sivoththaman, G.J. Adriaenssens, M. Ádám, Nguyen Quoc Khánh, I Pintér, Jef Poortmans, István Bársony, A. H. Abdulhadi, Zs Makaró, Hai Zhi Song
Publikováno v:
Applied Surface Science. :224-227
Low cost and low voltage (< 1 keV) Plasma Immersion Ion Implantation (PIII) for acceptor and donor doping was studied from RF plasmas of 1% PH 3 -H 2 and 1% B 2 H 6 -H 2 and gas mixtures, respectively. Conventional annealing and Rapid Thermal Process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b266ca7f60a0876abb6b9ec2a141ff
https://doi.org/10.1016/s0169-4332(98)00424-3
https://doi.org/10.1016/s0169-4332(98)00424-3
Autor:
R. Van Overstraeten, Sivanarayanamoorthy Sivoththaman, Jozef Szlufcik, Robert Mertens, J.F. Nlis
Publikováno v:
Proceedings of the IEEE. 85:711-730
Approximately 2 billion people, mainly in Third World countries, are not connected to an electric grid. The standard, centralized grid development is too expensive and time consuming to solve the energy demand problem. Therefore, there is a need for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::215f146f7d3fdf14964eb89376351373
https://doi.org/10.1109/5.588971
https://doi.org/10.1109/5.588971
Publikováno v:
Solid State Phenomena. :461-472
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3fc3f9ae0b26186fa57b8b6dd413e9
https://doi.org/10.4028/www.scientific.net/ssp.51-52.461
https://doi.org/10.4028/www.scientific.net/ssp.51-52.461
Autor:
Le Quang Nam, H.E. Elgamel, Robert Mertens, M. Rodot, Sivanarayanamoorthy Sivoththaman, Johan Nijs, Moustafa Y. Ghannam, D. Sarti
Publikováno v:
Solar Energy Materials and Solar Cells. 36:99-105
The compensatory behaviour of open-circuit voltage ( V OC ) and short-circuit current ( J SC ) in function of the base resistivity of multicrystalline silicon (Polix) solar cells (4 cm 2 ) is investigated. Thin substrates (200 μm) with base resistiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79bd630a0405769cc9ca0ddd7bd416e4
https://doi.org/10.1016/0927-0248(94)00161-k
https://doi.org/10.1016/0927-0248(94)00161-k
Publikováno v:
IEEE Electron Device Letters. 21:274-276
Selective phosphorous diffusion is performed in Si to simultaneously form shallow n/sup +/p junctions of different depths in the submicron range by rapid thermal annealing (RTA). Low temperature (400/spl deg/C) atmospheric pressure chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5cc0ca988ce6c0e569e640a13ccc7e1
https://doi.org/10.1109/55.843148
https://doi.org/10.1109/55.843148
Publikováno v:
Applied Physics Letters. 71:392-394
Rapid thermal annealing (RTA) of spin-coated phosphoric acid (H3PO4) films on silicon substrates has been studied for the formation of shallow junctions. The junctions are characterized by spreading resistance profiling. Device quality, shallow ( 750
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82872cddc772a4159be14fb618d095c
https://doi.org/10.1063/1.119547
https://doi.org/10.1063/1.119547
Publikováno v:
Applied Physics Letters. 67:2335-2337
Large area n+pp+ solar cells have been fabricated on 10 cm×10 cm pseudo‐quasi‐square CZ silicon wafers (1 Ω cm, p‐type) predominantly used by the photovoltaic (PV) industry. All the high‐temperature steps have been performed by rapid therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fe9e43f820d40e88bfc755fc66a21f
https://doi.org/10.1063/1.114336
https://doi.org/10.1063/1.114336
Autor:
D. Sarti, J.F. Nijs, H.E. Elgamel, Sivanarayanamoorthy Sivoththaman, Moustafa Y. Ghannam, M. Rodot
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
The trade-off between the open circuit voltage and the short circuit current i.f.o. the base resistivity of multicrystalline silicon (Polix) solar cells (4 cm/sup 2/) is investigated. Very thin substrates (180 /spl mu/m) with base resistivities betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e967a599063411b56fdcac7a8a7d9785
https://doi.org/10.1109/pvsc.1993.347070
https://doi.org/10.1109/pvsc.1993.347070
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
The effect of heavy phosphorus diffusion on the quality of multicrystalline silicon is investigated by studying the quantum yields measured with and without bias light for solar cells fabricated on Polix (Photowatt) and Eurosolare material. A serious
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c3ad02e43238e127cab60aebe145d1
https://doi.org/10.1109/pvsc.1993.347067
https://doi.org/10.1109/pvsc.1993.347067