Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors

Autor: Sven Van Elshocht, Sivan Fadida, Moshe Eizenberg, Laura Nyns

Publikováno v: Journal of Electronic Materials. 46:386-392

Remote oxygen scavenging has been studied in a metal/high-k dielectric/GeO2/Ge stack, where a thin Ti layer inserted into the metal/high-k dielectric interface serves as the scavenger. First, we established that remote oxygen scavenging indeed occurs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb31453e1e012536636e5872c5ec7ae3
https://doi.org/10.1007/s11664-016-4841-6

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Autor: Roy Winter, Felix Palumbo, Moshe Eizenberg, Sivan Fadida, Sebastian M. Pazos, Fernando L. Aguirre

Publikováno v: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET

The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33cc481f46ed51d37ba6b8730b12986b
https://doi.org/10.1063/1.5018193

Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks

Autor: Laura Nyns, Moshe Eizenberg, S. Van Elshocht, Matty Caymax, Sivan Fadida

Publikováno v: Microelectronic Engineering. 88:1557-1559

Band gap and band offsets of hafnium and zirconium oxides were investigated on Ge substrates with a fixed Al"2O"3/GeO"2 passivation layer. Chemical properties and band alignment with Ge were determined by X-ray photoelectron spectroscopy; characteriz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f931e73dbd76af868dd90f3855843202
https://doi.org/10.1016/j.mee.2011.03.075

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Autor: Sivan Fadida, Oreste Madia, Jack Strand, D. Andreev, Laurent Breuil, Judit Lisoni, Moshe Eizenberg, Michel Houssa, Valery V. Afanas'ev, Florin Cerbu, Alexander L. Shluger, Kittl Jorge A, Andre Stesmans

Publikováno v: Applied Physics Letters. 108:222901

Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energeticall

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7eb12502881f05e5b665dae7ca45bf3d
https://doi.org/10.1063/1.4952718

Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

Autor: Alberto Verdini, Sivan Fadida, Luca Floreano, Ioannis Kymissis, Laura Nyns, S. Van Elshocht, Moshe Eizenberg, P. Shekhter, Dean Cvetko

Publikováno v: Journal of applied physics 116 (2014): 164101. doi:10.1063/1.4898645
info:cnr-pdr/source/autori:Fadida, S.; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.; Eizenberg, M./titolo:Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack/doi:10.1063%2F1.4898645/rivista:Journal of applied physics/anno:2014/pagina_da:164101/pagina_a:/intervallo_pagine:164101/volume:116

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied us

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::029ad9303ae984c23666c5d29a28cdab
https://doi.org/10.1063/1.4898645