Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Sivalingam Sivananthan"'
Publikováno v:
Journal of Electronic Materials. 51:6784-6791
Publikováno v:
Microsystem Technologies. 27:3293-3297
Adhesive wafer bonding of micro-actuators using SU-8 photoresist is reported. It was investigated in this study that the bonding temperature, bonding pressure, baking time and thickness of the cross-linked SU-8 photoresist layer affects the bonding s
Publikováno v:
Microsystem Technologies. 27:3235-3238
Temperature-dependent optical characterization of Fabry–Perot optical filters using Fourier transform infrared spectroscopy (FTIR) is reported. We have characterized various optical filters assembled from ZnSe/BaF2 based distributed Bragg reflector
Publikováno v:
Microsystem Technologies. 27:2785-2790
The design, fabrication, and characterization of abrupt interface and graded interface distributed Bragg reflector (DBR) multilayers is reported. Electron-beam deposited zinc selenide (ZnSe) and Barium Fluoride (BaF2) thin films were chosen as the hi
Publikováno v:
Microsystem Technologies. 27:2751-2759
The fabrication and testing of a parallel plate MEMS electrostatic micro-actuator is reported. The device consists of stationary bulk silicon and movable membrane chips with three spring-like x-beam configurations fabricated from a silicon on insulat
Autor:
Ce Sun, Eric Colegrove, Tadas Paulauskas, Robert F. Klie, Sivalingam Sivananthan, Maria K. Y. Chan, Christopher Buurma, Moon J. Kim, Z. Guo, Brian Stafford
Publikováno v:
Acta Crystallographica Section A Foundations and Advances. 70:524-531
Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also pu
Publikováno v:
Journal of Electronic Materials. 42:3331-3336
The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p–n junctions and low Shockley–Read–Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30 years by
Publikováno v:
Journal of Electronic Materials. 42:3283-3287
Low-cost silicon-based alternative substrates are an attractive choice for next-generation large-area high-resolution multicolor infrared (IR) detector arrays. However, the high density of dislocations formed during molecular-beam epitaxy growth of H
Autor:
Fatih Şen, Ce Sun, Sivalingam Sivananthan, Christopher Buurma, Maria K. Y. Chan, Robert F. Klie, Tadas Paulauskas, Moon J. Kim
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
A fundamental understanding of the role of vacancies, interstitials, dislocations and grain boundaries on the electronic structure of CdTe may lead to efficiency improvements. Atomistic-level characterization, including microscopy and first principle
Publikováno v:
Journal of Electronic Materials. 39:863-867
Single-crystalline CdTe(133) films have been grown by metalorganic chemical vapor deposition on Si(211) substrates. We studied the effect of various growth parameters on the surface morphology and structural quality of CdTe films. Proper oxide remova