Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Siva Prasad Devireddy"'
Autor:
Zeynep Celik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka
Publikováno v:
Microelectronics Reliability. 49:103-112
A new unified noise model is presented that accurately predicts the low-frequency noise spectrum exhibited by MOSFETs with high dielectric constant (high- k ), multi-stack gate dielectrics. The proposed multi-stack unified noise (MSUN) model is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f50d60ad995aa63c3ff93aad30cd20
https://doi.org/10.1016/j.microrel.2008.12.005
https://doi.org/10.1016/j.microrel.2008.12.005
Autor:
Tanvir Morshed, Siva Prasad Devireddy, Keith Green, Zeynep Celik-Butler, Mark R. Visokay, A. Shanware, James J. Chambers, Luigi Colombo
Publikováno v:
Solid-State Electronics. 52:711-724
A physics-based low frequency noise model has been developed for MOSFET devices with nitrided high- κ gate dielectric materials. The new model is built upon the correlated carrier number and surface mobility fluctuations theory, where the original U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1699ad98304e33ddc80b075137ca8efe
https://doi.org/10.1016/j.sse.2007.10.003
https://doi.org/10.1016/j.sse.2007.10.003
Autor:
Hsing-Huang Tseng, Siva Prasad Devireddy, Bigang Min, Philip J. Tobin, Ania Zlotnicka, Zeynep Celik-Butler
Publikováno v:
Microelectronics Reliability. 47:1228-1232
Low frequency noise measurements were performed on n- and p-channel MOSFETs with TaSiN and TiN metal gates, respectively, deposited on ALD HfO2 gate dielectric. Lower normalized current noise power spectral density is reported for these devices in co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c4f81fbe0a531d0dc908f943861bf01
https://doi.org/10.1016/j.microrel.2007.05.006
https://doi.org/10.1016/j.microrel.2007.05.006
Autor:
Bigang Min, A. Shanware, Keith Green, James J. Chambers, Antonio L. P. Rotondaro, Siva Prasad Devireddy, Zeynep Celik-Butler, Luigi Colombo, Mark R. Visokay
Publikováno v:
IEEE Transactions on Electron Devices. 53:1459-1466
Low-frequency noise measurements and analysis were performed on n-channel MOSFETs with HfSiON as the gate-dielectric material. The role of SiON interfacial-layer thickness was investigated. It was observed that these fluctuations can be described by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016b2491ca24256c791626218f6da864
https://doi.org/10.1109/ted.2006.874759
https://doi.org/10.1109/ted.2006.874759
Autor:
Zeynep Celik-Butler, Bigang Min, Ania Zlotnicka, Fang Wang, Hsing-Huang Tseng, Philip J. Tobin, Siva Prasad Devireddy
Publikováno v:
IEEE Transactions on Electron Devices. 53:538-544
Low-frequency noise characteristics are reported for TaSiN-gated n-channel MOSFETs with atomic-layer deposited HfO/sub 2/ on thermal SiO/sub 2/ with stress-relieved preoxide (SRPO) pretreatment. For comparison, control devices were also included with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d1eda11d35a849ea953691eb4c2379
https://doi.org/10.1109/ted.2005.863769
https://doi.org/10.1109/ted.2005.863769
Autor:
Philip J. Tobin, Bigang Min, Fang Wang, Hsing-Huang Tseng, Zeynep Celik-Butler, Siva Prasad Devireddy, Anna Zlotnicka
Publikováno v:
IEEE Transactions on Electron Devices. 51:1315-1322
Low-frequency noise measurements were performed on p- and n-channel MOSFETs with HfO/sub 2/, HfAlO/sub x/ and HfO/sub 2//Al/sub 2/O/sub 3/ as the gate dielectric materials. The gate length varied from 0.135 to 0.36 /spl mu/m with 10.02 /spl mu/m gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77512f413bda6c5a7ed1eada02a0563c
https://doi.org/10.1109/ted.2004.832821
https://doi.org/10.1109/ted.2004.832821
Autor:
A. Shanware, James J. Chambers, Zeynep Celik-Butler, Mohammad Shahriar Rahman, Tanvir Morshed, Keith Green, Mark R. Visokay, Siva Prasad Devireddy, Luigi Colombo
Publikováno v:
AIP Conference Proceedings.
Variable temperature device characteristics have been studied on polycrystalline silicon gate MOSFETs with HfSiON as the high‐κ dielectric on SiON interfacial layer (IL). The effects of phonon scattering were investigated. Variable temperature noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2416f2a065fe1db9ccb40eb58666d11
https://doi.org/10.1063/1.2759683
https://doi.org/10.1063/1.2759683
Autor:
Zeynep Celik-Butler, Siva Prasad Devireddy, Philip J. Tobin, Ania Zlotnicka, Shahriar Rahman, Tanvir Morshed, Hsing-Huang Tseng
Publikováno v:
AIP Conference Proceedings.
Low frequency noise characteristics are presented for TaSiN/HfO2/SiO2 n‐MOSFETs in the 78–300K range. The general validity of the carrier number /correlated mobility fluctuations as the underlying noise mechanism at low temperatures was confirmed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bed171490854ad0e9458ba669750fa9
https://doi.org/10.1063/1.2759628
https://doi.org/10.1063/1.2759628
Autor:
Ania Zlotnicka, Tanvir Morshed, A. Shanware, M.S. Rahman, James J. Chambers, Hsing-Huang Tseng, Manuel Quevedo-Lopez, Luigi Colombo, Zeynep Celik-Butler, Keith Green, Mark R. Visokay, Siva Prasad Devireddy
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A new 1/f noise model based on correlated number-mobility fluctuations theory is proposed to account for the low frequency noise in MOSFETs with multi-layered gate dielectrics. In this new model, the trap density profile takes into account the effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d776e15b5eeb90fd07db453afea3833
https://doi.org/10.1109/iedm.2007.4419000
https://doi.org/10.1109/iedm.2007.4419000
Autor:
Siva Prasad Devireddy, Manuel Quevedo-Lopez, A. Shanware, M. Shahriar Rahman, Zeynep Celik-Butler, Luigi Colombo, Tanvir Morshed
Publikováno v:
AIP Conference Proceedings.
Low frequency noise (LFN) characteristics of HfSiO and HfSiON nMOS with TiN metal gate were compared. Two different methods to introduce nitrogen in HfSiO, plasma and thermal nitridation, were discussed from LFN point of view. Using Multi‐stack Uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14053b7132cfa549a652af5ec5cf41f
https://doi.org/10.1063/1.2759629
https://doi.org/10.1063/1.2759629