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Enhanced in situ H 2 O 2 electrosynthesis and leachate concentrate degradation through side-aeration and modified cathode in an electro-Fenton system.

Autor: Zhang F; Faculty of Environment and Life, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing 100124, China. Electronic address: fanbin@emails.bjut.edu.cn., Li T; Faculty of Environment and Life, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing 100124, China., Zhang Z; Faculty of Environment and Life, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing 100124, China., Qin X; Faculty of Environment and Life, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing 100124, China. Electronic address: qinxia@bjut.edu.cn., Xu C; Faculty of Environment and Life, Beijing University of Technology, No.100 Pingleyuan, Chaoyang District, Beijing 100124, China.

Publikováno v: Waste management (New York, N.Y.) [Waste Manag] 2024 Sep 15; Vol. 186, pp. 35-45. Date of Electronic Publication: 2024 Jun 08.

Defective nitrogen doped carbon material derived from nano-ZIF-8 for enhanced in-situ H 2 O 2 generation and tetracycline hydrochloride degradation in electro-Fenton system.

Autor: Luo X; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China., Zhu R; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China., Zhao L; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China., Gong X; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China; Key Laboratory of Land Resources Evaluation and Monitoring in Southwest, Ministry of Education, Sichuan Normal University, Chengdu, Sichuan, 610068, China; Key Laboratory of Special Waste Water Treatment, Sichuan Province Higher Education System, Chengdu, Sichuan, 610066, China; Sichuan Provincial Engineering Laboratory of Livestock Manure Treatment and Recycling (Sichuan Normal University), China. Electronic address: gxb@sicnu.edu.cn., Zhang L; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China., Fan L; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China; Key Laboratory of Land Resources Evaluation and Monitoring in Southwest, Ministry of Education, Sichuan Normal University, Chengdu, Sichuan, 610068, China; Key Laboratory of Special Waste Water Treatment, Sichuan Province Higher Education System, Chengdu, Sichuan, 610066, China. Electronic address: fanlu@sicnu.edu.cn., Liu Y; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan, 610066, China; Key Laboratory of Land Resources Evaluation and Monitoring in Southwest, Ministry of Education, Sichuan Normal University, Chengdu, Sichuan, 610068, China; Key Laboratory of Special Waste Water Treatment, Sichuan Province Higher Education System, Chengdu, Sichuan, 610066, China.

Publikováno v: Environmental research [Environ Res] 2024 Jun 15; Vol. 251 (Pt 2), pp. 118644. Date of Electronic Publication: 2024 Mar 12.

s-scheme3D/3D Bi ⁰ /BiOBr/P Doped g-C3 N4 with Oxygen Vacancies (Ov) for Photodegradation of Pharmaceuticals: In-situ H 2 O 2 Production and Plasmon Induced Stability.

Autor: Malefane ME; Institute for Nanotechnology and Water Sustainability, College of Science, Engineering and Technology, University of South Africa, Florida, Johannesburg, 1709, South Africa., Managa M; Institute for Nanotechnology and Water Sustainability, College of Science, Engineering and Technology, University of South Africa, Florida, Johannesburg, 1709, South Africa., Nkambule TTI; Institute for Nanotechnology and Water Sustainability, College of Science, Engineering and Technology, University of South Africa, Florida, Johannesburg, 1709, South Africa., Kuvarega AT; Institute for Nanotechnology and Water Sustainability, College of Science, Engineering and Technology, University of South Africa, Florida, Johannesburg, 1709, South Africa.

Publikováno v: ChemSusChem [ChemSusChem] 2024 Aug 15, pp. e202401471. Date of Electronic Publication: 2024 Aug 15.

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Autor: Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang

Publikováno v: Micromachines, Vol 14, Iss 7, p 1278 (2023)

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3

Externí odkaz: https://doaj.org/article/93a9ab6c62aa4233b9563f01b6ed81b3