Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Siti Amiera Mohd Akhbar"'
Publikováno v:
Journal of Electronic Science and Technology, Vol 21, Iss 2, Pp 100203- (2023)
The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amp
Externí odkaz:
https://doaj.org/article/a31d3dac57ac4017bf4728c276aa399d
Publikováno v:
Journal of Engineering Technology and Applied Physics. 5:1-4
In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10deac1fee022dc7fb086ddc26b28916
https://doi.org/10.33093/jetap.2023.5.1.1
https://doi.org/10.33093/jetap.2023.5.1.1
Autor:
Siti Amiera Mohd Akhbar, Duu Sheng Ong
Publikováno v:
Journal of Physics D: Applied Physics. 55:375103
The performances of GaAs-based Gunn diodes with notch-δ-doped structures are studied in this work. The δ-doped effect is analysed using Monte Carlo modelling in terms of temporal evolution of current density, electric field profile, electron energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::776fea0af06f107ea7b3d0a5eb928442
https://doi.org/10.1088/1361-6463/ac767c
https://doi.org/10.1088/1361-6463/ac767c