Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Sitaram Arkalgud"'
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Sitaram Arkalgud
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2017:1-39
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 12:219-225
The challenge for three-dimensional integrated circuit assembly is how to manage warpage and thin wafer handling to achieve a high assembly yield and to ensure that the final structure can pass the specified reliability requirements. Our test vehicle
Autor:
Grant Villavicencio, Hong Shen, Liang Wang, Charles G. Woychik, Scott McGrath, Sitaram Arkalgud, Guilian Gao
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 12:123-128
Driven by key metrics, including higher computing performance, lower power consumption, smaller form factor, increased bandwidth, and reduced latency (interconnect delay), the semiconductor interconnect technology is transitioning to 2.5D and gaining
Autor:
Sitaram Arkalgud, Guilian Gao, Grant Villavicencio, Sangil Lee, Charles G. Woychik, Bongsub Lee, Scott McGrath, Liang Wang, Cyprian Emeka Uzoh, Hong Sheng, Roseann Alatorre
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:000075-000108
2.5D/3D IC assembly is where the traditional foundry and assembly house model breaks down. The greatly reduced feature sizes of microbumps in combination with very large, thin interposers and ICs present many challenges for assembly. With densely int
Autor:
Scott McGrath, Charles G. Woychik, Guilian Gao, Liang Wang, Sitaram Arkalgud, Eric S. Tosaya, Hong Shen
Publikováno v:
International Symposium on Microelectronics. 2014:000606-000611
2.5D technology is gaining acceptance in the industry and an increasing number of products are beginning to enter volume manufacturing. As with all interconnect technologies, the key metrics driving the transition include higher computing performance
Autor:
Zhuowen Sun, Liang Wang, Cyprian Emeka Uzoh, Andrew Cao, Hong Shen, Guilian Gao, Sitaram Arkalgud, Bongsub Lee
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000737-000767
3D-IC has been increasingly adopted by the industry owing to its promise of higher device speed and package bandwidth, improved power consumption, reduced form factor, and lower cost for important applications over a wide range of industrial segments
Autor:
Andrew C. Rudack, Alain C. Diebold, Sitaram Arkalgud, Peter Krueger, Lay Wai Kong, Ehrenfried Zschech
Publikováno v:
Microelectronic Engineering. 92:24-28
Visualization of voids and copper extrusion in copper-filled through-silicon vias (TSVs) under different annealing conditions is greatly enhanced using X-ray microscopy. In addition, the dimensions of the TSVs after Cu deposition can also be measured
Autor:
Jack Enloe, Kathleen Dunn, Iqbal Ali, Klaus Hummler, Brian Sapp, Thomas Murray, Sitaram Arkalgud, Robert E. Geer, Seth Kruger, Pieper Stefan, Colin McDonough, Aaron Cordes
Publikováno v:
International Symposium on Microelectronics. 2012:000023-000030
Cu-filled through-silicon vias (TSVs) are an essential building block of 3D and 2.5D integrated chips. In the TSV-mid processing flow, which has emerged as an industry mainstream, one or more on-chip wiring levels are formed after the TSV Cu fill is
Autor:
Andy Rudack, Sitaram Arkalgud, Christopher Taylor, Jamal Qureshi, Lay Wai Kong, Alain C. Diebold, John Hudnall, Pratibha Singh, Vimal K. Kamineni
Publikováno v:
Thin Solid Films. 519:2924-2928
Benzocyclobutene (BCB) used for bonding silicon wafers to enable 3D interconnect technology is characterized using spectroscopic ellipsometry (SE). SE is a non-destructive technique that has been used to characterize the thickness and dielectric prop