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pro vyhledávání: '"Sita S Mani"'
Autor:
Phillip Albert Sanger, Sita S Mani, M.F MacMillan, S. Seshadri, Pankaj B. Shah, Anant K. Agarwal, J.B. Casady
Publikováno v:
Solid-State Electronics. 44:303-308
This paper presents an overview of SiC power devices. The progress in pn junction diode development is described. The data on 10 A, 1000 V, packaged 4H–SiC ion-implanted p + nn + diode are presented. It is found that in order to develop high voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f16c1a79fbcf8dc5aba7e15c21b452
https://doi.org/10.1016/s0038-1101(99)00236-1
https://doi.org/10.1016/s0038-1101(99)00236-1
