Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sisir Chowdhury"'
Autor:
Jayshi Minj, Fakhra Masroor, Pranab Biswas, Gargi Mukherjee, Susanta Kumar Pain, Sisir Chowdhury, Sayani Dolui
Publikováno v:
Journal of Evolution of Medical and Dental Sciences. 4:13304-13308
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b835c84a1ae7839074e2e68e2fcd754
https://doi.org/10.14260/jemds/2015/1913
https://doi.org/10.14260/jemds/2015/1913
Publikováno v:
AIP Conference Proceedings.
Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b99e4d98d2235c8b23541e9da5a2291
https://doi.org/10.1063/1.5032568
https://doi.org/10.1063/1.5032568
Autor:
Sisir Chowdhury, B. Nagabhusan, Nripendra N. Halder, Pallab Banerji, Sanatan Chattopadhyay, Mainak Palit, K. Sarkar, Pranab Biswas
Publikováno v:
CrystEngComm. 17:8519-8528
We report the growth of InxGa1−xAs nanowires on Si(100) substrates by the metal–organic chemical vapor deposition technique in a one-step process using silver nanoparticles as catalysts. Nanowires were found to grow below the eutectic temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a2498f4c193eba49bc6e928c08a792
https://doi.org/10.1039/c5ce01565k
https://doi.org/10.1039/c5ce01565k
Publikováno v:
Advanced Materials Research. 716:281-285
Gallium Phosphide (GaP) nanostructures were grown on p-Si substrates by Metal Organic Chemical Vapor Deposition (MOCVD) to study the structure of low dimensional IIIV semiconductor on Si substrates. It is found that at a temperature of 540 °C, nanos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59ee5d1d977070bc7ddfd02a336b173
https://doi.org/10.4028/www.scientific.net/amr.716.281
https://doi.org/10.4028/www.scientific.net/amr.716.281
Autor:
B. Nagabhushan, Sk Masiul Islam, Sisir Chowdhury, Pallab Banerji, Snigdha Chakraborty, Rabibrata Mukherjee, K. Sarkar
Publikováno v:
AIP Conference Proceedings.
Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f79f7c8efa83d024b72b5e3cb595c73
https://doi.org/10.1063/1.4917676
https://doi.org/10.1063/1.4917676
Autor:
B. Nagabhushan, K. Sarkar, Pranab Biswas, Souvik Kundu, Arunava Chaudhuri, Sisir Chowdhury, Pallab Banerji, Nripendra N. Halder
Publikováno v:
Applied Physics Letters. 106:012103
Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4156275ed620b184c10eed1d5576705f
https://doi.org/10.1063/1.4905345
https://doi.org/10.1063/1.4905345