Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Siroos Toofan"'
Publikováno v:
International Journal of Circuit Theory and Applications. 51:866-879
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0f7bd042610438a66f2ba8014f4c27
https://doi.org/10.1002/cta.3427
https://doi.org/10.1002/cta.3427
Publikováno v:
International Journal of Circuit Theory and Applications. 50:1502-1510
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83b2b96865161501901f7bf66c752e1
https://doi.org/10.1002/cta.3218
https://doi.org/10.1002/cta.3218
Publikováno v:
Journal of Circuits, Systems and Computers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e693c9e20b03d21abef75e7f3fd50989
https://doi.org/10.1142/s0218126623501761
https://doi.org/10.1142/s0218126623501761
Publikováno v:
Analog Integrated Circuits and Signal Processing. 109:367-377
This paper presents a fast configurable automatic gain control (AGC) with strong focus on fast acting control and low power consumption. This AGC includes two paths, main amplification path and gain adjusting path. Using the gain adjusting path throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f9b94909eb28536a3df0f790bfa643b
https://doi.org/10.1007/s10470-021-01921-z
https://doi.org/10.1007/s10470-021-01921-z
Autor:
Abbas Nasri, Motahhareh Estebsari, Siroos Toofan, Anna Piacibello, Marco Pirola, Vittorio Camarchia, Chiara Ramella
Publikováno v:
Electronics; Volume 11; Issue 4; Pages: 552
This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d57f744ee1a4d0474bc13c134243f3f
http://hdl.handle.net/11583/2955197
http://hdl.handle.net/11583/2955197
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:537-541
In this brief, the switching behavior of the cascode topology is improved through the floating bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage stress on transistors, its parasitic elements increase power loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccaf58dd63061ba30076929e10835eed
https://doi.org/10.1109/tcsii.2018.2867016
https://doi.org/10.1109/tcsii.2018.2867016
Publikováno v:
Bagheriye, L, Toofan, S, Saeidi, R & Moradi, F 2019, ' Highly stable, low power FinFET SRAM cells with exploiting dynamic back-gate biasing ', Integration, vol. 65, pp. 128-137 . https://doi.org/10.1016/j.vlsi.2018.11.011
In this paper, we propose two independent gate (IG) FinFET SRAM cells that use PMOS access transistors and back-gate (BG) biasing to achieve a high-stability performance. In the first cell, the back-gate of the access transistors is connected to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c984310e9ede2c6a842fbfaac30d569d
https://doi.org/10.1016/j.vlsi.2018.11.011
https://doi.org/10.1016/j.vlsi.2018.11.011
Autor:
Anna Piacibello, Vittorio Camarchia, Motahhareh Estebsari, Chiara Ramella, Marco Pirola, Siroos Toofan, Abbas Nasri
Publikováno v:
Electronics, Vol 10, Iss 873, p 873 (2021)
Electronics
Volume 10
Issue 8
Electronics
Volume 10
Issue 8
This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::624e781757003edbbe58d6be9203ac0d
https://www.mdpi.com/2079-9292/10/8/873
https://www.mdpi.com/2079-9292/10/8/873
Autor:
Anna Piacibello, Vittorio Camarchia, Siroos Toofan, Abbas Nasri, Marco Pirola, Chiara Ramella, Motahhareh Estebsari
Publikováno v:
2020 23rd International Microwave and Radar Conference (MIKON).
This paper presents a wideband class J power amplifier (PA) based on a packaged 10 W GaN HEMT device covering the 3 GHz to 3.8 GHz frequency range. A good trade-off between efficiency and gain has been pursued in synthesizing the second harmonic outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3541cca0ab18b1a6a8c0feac525d049
https://doi.org/10.23919/mikon48703.2020.9253829
https://doi.org/10.23919/mikon48703.2020.9253829
Autor:
Siroos Toofan, A. R. Dehqan
Publikováno v:
Analog Integrated Circuits and Signal Processing. 98:545-553
In this paper, switching behavioural of cascode transistor in class-E cascode structure is improved by resonance gate bias (RGB) technique. The proposed technique can be used to increase supply voltage of a cascode class-E power amplifier (PAs) in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa263f405ff2f60a26c9c2576c3068a
https://doi.org/10.1007/s10470-018-1352-9
https://doi.org/10.1007/s10470-018-1352-9