Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Sipahi, Guilherme M."'
The wurtzite phase group III-Nitrides (AlN, GaN, InN) have attracted great interest due to their successful applications in the optoelectronics since the 90's. In this paper we perform a comprehensive study of AlN, GaN and InN structural elastic and
Externí odkaz:
http://arxiv.org/abs/2108.10968
Autor:
de Medeiros, Marcos H. L., Teixeira, Raphael L. R. C., Sipahi, Guilherme M., da Silva, Luis G. G. V. Dias
Publikováno v:
Phys. Rev. B 104 195307 (2021)
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge
Externí odkaz:
http://arxiv.org/abs/2108.01968
Autor:
Žutić, Igor, Xu, Gaofeng, Lindemann, Markus, Junior, Paulo E. Faria, Lee, Jeongsu, Labinac, Velimir, Stojšić, Kristian, Sipahi, Guilherme M., Hofmann, Martin R., Gerhardt, Nils C.
Publikováno v:
Solid State Commun. 316-317, 113949 (2020)
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-po
Externí odkaz:
http://arxiv.org/abs/2005.00591
Publikováno v:
Phys. Rev. Materials 3, 044002 (2019)
In this work, we report an ab initio investigation based on density functional theory of the structural, energetic and electronic properties of 2D layered chalcogenides compounds based in the combination of the transition-metals (Ti, Zr, Hf, V, Nb, T
Externí odkaz:
http://arxiv.org/abs/1903.08112
Autor:
Campos, Tiago, Junior, Paulo E. Faria, Gmitra, Martin, Sipahi, Guilherme M., Fabian, Jaroslav
Publikováno v:
Phys. Rev. B 97, 245402 (2018)
A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are stu
Externí odkaz:
http://arxiv.org/abs/1802.06734
Publikováno v:
Journal of Applied Physics 123, 065702 (2018)
Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal fo
Externí odkaz:
http://arxiv.org/abs/1801.07526
Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-b
Externí odkaz:
http://arxiv.org/abs/1701.07793
Autor:
Bastos, Carlos M. O., Sabino, Fernando P., Junior, Paulo E. Faria, Campos, Tiago, Da Silva, Juarez L. F., Sipahi, Guilherme M.
The $\mathbf{k \cdot p}$ method is a successful approach to obtain band structure, optical and transport properties of semiconductors, and it depends on external parameters that are obtained either from experiments, tight binding or ab initio calcula
Externí odkaz:
http://arxiv.org/abs/1608.04982
Autor:
Junior, Paulo E. Faria, Campos, Tiago, Bastos, Carlos M. O., Gmitra, Martin, Fabian, Jaroslav, Sipahi, Guilherme M.
Publikováno v:
Phys. Rev. B9 93, 235204 (2016)
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compo
Externí odkaz:
http://arxiv.org/abs/1604.06014
Autor:
Junior, Paulo E. Faria, Xu, Gaofeng, Lee, Jeongsu, Gerhardt, Nils C., Sipahi, Guilherme M., Žutić, Igor
Publikováno v:
Phys. Rev. B 92, 075311 (2015)
Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microsco
Externí odkaz:
http://arxiv.org/abs/1508.04146