Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Siou Cheng Lien"'
Publikováno v:
Materials Science Forum. :443-446
A series of 4H-SiC bulk wafers with different carrier concentrations were studied by Raman scattering in temperature range of 80K to 873K. Different Raman phonon modes of 4H-SiC can be clearly observed. Most Raman peaks of different modes shift to lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19817997e5de3212cc2eee28b87fcef0
https://doi.org/10.4028/www.scientific.net/msf.740-742.443
https://doi.org/10.4028/www.scientific.net/msf.740-742.443
Autor:
Zhe Chuan Feng, Hong Chao Wang, Siou-Cheng Lien, Hua Yang Sun, Chee-Wee Liu, Ting Mei, Zhi Ren Qiu
Publikováno v:
Optics express. 21(22)
Raman spectra of three bulk 4H-SiC wafers with different free carrier concentration were measured at temperature from 80 K to 873 K. As temperature increases, Raman peaks of most optical phonon modes show monotonous down shift. An anomalous non-monot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7db0713e1dcfc85991e102c3626fc6cb
https://pubmed.ncbi.nlm.nih.gov/24216868
https://pubmed.ncbi.nlm.nih.gov/24216868
Autor:
Siou-Cheng Lien, 練修成
95
A series of optical characterization techniques, including Raman scattering, Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD), were employed to assess wide
A series of optical characterization techniques, including Raman scattering, Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD), were employed to assess wide
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/30245555187257966372
Autor:
Nola Li, Ian T. Ferguson, Zhe Chuan Feng, Jeff Nause, Adriana Valencia, Shen-Jie Wang, Siou-Cheng Lien, Eun-Hyun Park
Publikováno v:
Journal of Applied Physics. 102:106105
InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3b3e368913948b7b28356f1606fd43
https://doi.org/10.1063/1.2817482
https://doi.org/10.1063/1.2817482