Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Siok Soh"'
Autor:
Nak-Jin Son, Byung-Il Ryu, Donggun Park, Chang-Hoon Jeon, Satoru Yamada, Shin-Deuk Kim, Young-pil Kim, Jung-Su Park, Sang-Yeon Han, Wouns Yang, Wookje Kim, Wonseok Lee, Siok Soh
Publikováno v:
2006 European Solid-State Device Research Conference.
Gate induced drain leakage (GIDL) characteristics were investigated with the recessed channel array transistor (RCAT) for DRAM, using the elevated source drain (ESD). The lower doping concentration of a source-drain region in the ESD structure reduce
Autor:
Wookje Kim, Satoru Yamada, Sang-Yeon Han, Chang-Hoon Jeon, Shin-Deuk Kim, Siok Soh, Nak-Jin Son, Jung-Su Park, Wouns Yang, Young-Pil Kim, Won-Seok Lee, Donggun Park, Byung-il Ryu
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p254-257, 4p