Wafer edge polishing process for defect reduction during immersion lithography.

Autor: Okazaki, Motoya, Maas, Raymond, Ko, Sen-Hou, Chen, Yufei, Miller, Paul, Thothadri, Mani, Dutta, Manjari, Chang, Chorng-Ping, Anapolsky, Abraham, Lazik, Chris, Uritsky, Yuri, Seamons, Martin, Padhi, Deenesh, Yeh, Wendy, Sinkwitz, Stephan, Ngai, Chris

Publikováno v: Proceedings of SPIE; Nov2008 Part 2, Issue 1, p69223A-69223A-10, 10p

Linewidth roughness reduction at the 55 nm node through combination of classical process optimization and application of surface conditioner solutions.

Autor: Wong, Patrick, Gehoel, Wendy, Sinkwitz, Stephan, Zhang, Peng, Jaramillo Jr., Manuel, Rao, Madhukar B., Horvath, Bridget, Ross, Brenda, Cassel, Shawn

Publikováno v: Proceedings of SPIE; Nov2006 Part 2, Issue 1, p61533V-61533V-13, 13p

Progress in 157-nm resist performance and potential.

Autor: Wong, Patrick, Sinkwitz, Stephan, Hansen, Steven G., Goethals, Anne-Marie, Conley, Will

Publikováno v: Proceedings of SPIE; Nov2002, Issue 1, p512-521, 10p

HPR 506 photoresist used as a positive tone ion resist.

Autor: Bruenger, W. H., Buchmann, L.-M., Torkler, M., Sinkwitz, Stephan

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 6, p3924-3927, 4p