Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sink, R. K."'
Publikováno v:
Proceedings of SPIE; Nov2000, Issue 1, p28-39, 12p
Autor:
Abare, Amber C., Mack, Michael P., Hansen, Mark W., Sink, R. K., Kozodoy, Peter, Keller, Sarah L., Hu, Evelyn L., Speck, James S., Bowers, John E., Mishra, Umesh K., Coldren, Larry A., DenBaars, Steven P.
Publikováno v:
Proceedings of SPIE; Nov1998, Issue 1, p103-112, 10p
Autor:
Kozodoy, P., Abare, A., Sink, R. K., Mack, M., Keller, S., DenBaars, S. P., Mishra, U. K., Steigerwald, D.
Publikováno v:
MRS Online Proceedings Library; 1997, Vol. 468 Issue 1, p481-486, 6p
Autor:
Sink, R. K., Keller, S., Keller, B. P., Babic, D. I., Holmes, A. L., Kapolnek, D., Wu, X. H., Speck, J. S., steven Denbaars, Bowers, J. E.
Publikováno v:
Scopus-Elsevier
Basal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved facet GaN lasers because the natural cleavage planes in (0001) α-A12O3 are not perpendicular to the wafer surface. This pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::14124bf696c9bb44c450025edee17838
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030368063&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030368063&partnerID=MN8TOARS
Autor:
steven Denbaars, Abare, A. C., Mack, M. P., Hansen, M., Sink, R. K., Kozodoy, P., Keller, S., Speck, J. S., Bowers, J. E., Mishra, U. K., Coldren, L. A.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6f358b27239fcd284803d4098e0e5ffe
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032313012&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032313012&partnerID=MN8TOARS