Výsledky vyhledávání - "Single electron memory"

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Autor: Jean-Pierre Raskin, Denis Flandre, Nicolas Reckinger, Xiaohui Tang, Laurent Francis, A. Karmous, Christophe Krzeminski, Jean-Pierre Colinge, Erich Kasper, Emmanuel Dubois, Aurélien Lecavelier des Etangs-Levallois, Zhenkun Chen

Publikováno v: Nano Letters
Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩
Nano Letters, American Chemical Society, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩

International audience; We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b524f53b9cb850407b7cc23e0d87cf5
http://arxiv.org/abs/1111.3683

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Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Autor: Nicolas Reckinger, Emmanuel Dubois, Alexandre Villaret, Xiaohui Tang, Christophe Krzeminski, D.-C. Bensahel, Vincent Bayot

Publikováno v: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5, pp.649-656
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩
IEEE Transactions on Nanotechnology, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩
IEEE Transactions on Nanotechnology, 2006, 5, pp.649-656

International audience; Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a44041cc66ef34051e0898252d54bdd2
https://hal.archives-ouvertes.fr/hal-00138655

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Akademický článek

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Memory effects in MOS capacitors with silicon quantum dots

Autor: Barbara Fazio, Salvatore Lombardo, Yougui Liao, Cosimo Gerardi, Isodiana Crupi, M. Vulpio, Corrado Bongiorno, M. Melanotte, Corrado Spinella

Publikováno v: Materials science & engineering. C, Biomimetic materials, sensors and systems
15 (2001): 283–285. doi:10.1016/S0928-4931(01)00220-X
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Spinella C, Gerardi C, Fazio B, Vulpio M, Melanotte M, Liao Y, Bongiorno C/titolo:Memory effects in MOS capacitors with silicon quantum dots/doi:10.1016%2FS0928-4931(01)00220-X/rivista:Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)/anno:2001/pagina_da:283/pagina_a:285/intervallo_pagine:283–285/volume:15

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183ea95e472509103cd209296dc69049
http://hdl.handle.net/10447/179590

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