Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Singh Sherjang"'
Publikováno v:
Solid State Phenomena. 282:329-333
As the technology nodes become smaller and smaller the circuit dies get closer and closer to the edge of the wafer. Defects and issues on the bevel are seen to cause issues such as flaking and blocked plating on the dies at the edge of the wafer. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8c53d18246cbf4393e54e124a80261
https://doi.org/10.4028/www.scientific.net/ssp.282.329
https://doi.org/10.4028/www.scientific.net/ssp.282.329
Publikováno v:
Solid State Phenomena. 255:105-110
In advanced technology nodes (sub 20nm), the gate & active contact architecture has become very complex. This architecture not only introduced new materials but also integrated additional patterning mask layers. This necessitated a separate Middle of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0131f0d216e72140333daa45804f10
https://doi.org/10.4028/www.scientific.net/ssp.255.105
https://doi.org/10.4028/www.scientific.net/ssp.255.105
Publikováno v:
SPIE Proceedings.
The prospect of EUVL (Extreme Ultraviolet Lithography) insertion into HVM (High Volume Manufacturing) has never been this promising. As technology is prepared for "lab to fab" transition, it becomes important to comprehend challenges associated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6575460dc53afb9c76ae14eb0919cf6
https://doi.org/10.1117/12.2258393
https://doi.org/10.1117/12.2258393
Autor:
Yang Zhang, Derya Deniz, Xiaodong Zhang, Garo Jacques Derderian, J.-B. Laloë, Min-Hwa Chi, Singh Sherjang, Kakoli Das, Suraj K. Patil, Jianghu Yan, Wen Pin Peng, Lei Zhu
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC).
As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a8b9d263892b3b30e319b68b29374c3
https://doi.org/10.1109/cstic.2016.7464004
https://doi.org/10.1109/cstic.2016.7464004
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Post salicidization cleaning is known to be challenging. A marginal process may leave unreactive metal residues on the surface which may lead to gate & active area shorts or contact fill issues. Since the etch rates as well as PRE (Particle Removal E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec60bcf0e375c9d6eeede31e3547b2af
https://doi.org/10.1109/asmc.2015.7164422
https://doi.org/10.1109/asmc.2015.7164422
Autor:
Peng, Wen Pin, Chi, Min-hwa, Derderian, Garo, Das, Kakoli, Zhang, Yang, Laloe, Jean-Baptiste, Deniz, Derya, Patil, Suraj, Yan, Jianghu, Singh, SherJang, Zhang, Xiaodong, Zhu, Lei
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC); 2016, p1-4, 4p
Autor:
Singh, Sherjang
Microelectrodes implanted in the brain as transducers for neuronal impulses should ideally constitute dual functionality, i.e. stimulating and recording to avoid use of separate electrodes, smaller size for highly localized response, impedance stabil
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1170556512
Publikováno v:
ECS Meeting Abstracts. :1040-1040
Most of the advanced technology node semiconductor device manufacturing has adopted the gate-last approach which utilizes a RMG (Replacement Metal-Gate) process. The gate last method prevents unnecessary thermal loading on the high-k gate material an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e050e6a312de0f0e4d3334b4348d5e5
https://doi.org/10.1149/ma2015-02/27/1040
https://doi.org/10.1149/ma2015-02/27/1040
Autor:
SINGH, SHERJANG
Electrode systems designed for stimulation and recording of neuronal activities have attracted wide interest, reflecting the potential for restoring sensory and neuromuscular deficits in affected individuals. Both materials stability and electrode de
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1123783498
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2018, Vol. 282 Issue: 1 p329-333, 5p