Zobrazeno 1 - 10
of 595
pro vyhledávání: '"Singh, Simranjeet"'
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device variations, ca
Externí odkaz:
http://arxiv.org/abs/2407.03843
Autor:
Singh, Simranjeet, Bende, Ankit, Jha, Chandan Kumar, Rana, Vikas, Drechsler, Rolf, Patkar, Sachin, Merchant, Farhad
In-memory computing (IMC) has gained significant attention recently as it attempts to reduce the impact of memory bottlenecks. Numerous schemes for digital IMC are presented in the literature, focusing on logic operations. Often, an application's des
Externí odkaz:
http://arxiv.org/abs/2407.02921
Autor:
Kao, I-Hsuan, Tang, Junyu, Ortiz, Gabriel Calderon, Zhu, Menglin, Yuan, Sean, Rao, Rahul, Li, Jiahan, Edgar, James H., Yan, Jiaqiang, Mandrus, David G., Watanabe, Kenji, Taniguchi, Takashi, Hwang, Jinwoo, Cheng, Ran, Katoch, Jyoti, Singh, Simranjeet
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers
Externí odkaz:
http://arxiv.org/abs/2405.10889
Autor:
Parrini, Luca, Soliman, Taha, Hettwer, Benjamin, Borrmann, Jan Micha, Singh, Simranjeet, Bende, Ankit, Rana, Vikas, Merchant, Farhad, Wehn, Norbert
In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced IMC can se
Externí odkaz:
http://arxiv.org/abs/2404.09818
Autor:
Bende, Ankit, Singh, Simranjeet, Jha, Chandan Kumar, Kempen, Tim, Cüppers, Felix, Bengel, Christopher, Zambanini, Andre, Nielinger, Dennis, Patkar, Sachin, Drechsler, Rolf, Waser, Rainer, Merchant, Farhad, Rana, Vikas
Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devi
Externí odkaz:
http://arxiv.org/abs/2310.10460
Autor:
Singh, Simranjeet, Jha, Chandan Kumar, Bende, Ankit, Rana, Vikas, Patkar, Sachin, Drechsler, Rolf, Merchant, Farhad
Existing logic-in-memory (LiM) research is limited to generating mappings and micro-operations. In this paper, we present~\emph{MemSPICE}, a novel framework that addresses this gap by automatically generating both the netlist and testbench needed to
Externí odkaz:
http://arxiv.org/abs/2309.04868
Autor:
Ulstrup, Søren, Veld, Yann in 't, Miwa, Jill A., Jones, Alfred J. H., McCreary, Kathleen M., Robinson, Jeremy T., Jonker, Berend T., Singh, Simranjeet, Koch, Roland J., Rotenberg, Eli, Bostwick, Aaron, Jozwiak, Chris, Rösner, Malte, Katoch, Jyoti
Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron
Externí odkaz:
http://arxiv.org/abs/2308.16509
Autor:
Singh, Simranjeet, Jha, Chandan Kumar, Bende, Ankit, Thangkhiew, Phrangboklang Lyngton, Rana, Vikas, Patkar, Sachin, Drechsler, Rolf, Merchant, Farhad
Memristor-based logic-in-memory (LiM) has become popular as a means to overcome the von Neumann bottleneck in traditional data-intensive computing. Recently, the memristor-aided logic (MAGIC) design style has gained immense traction for LiM due to it
Externí odkaz:
http://arxiv.org/abs/2307.03669
Autor:
Ghazal, Omar, Singh, Simranjeet, Rahman, Tousif, Yu, Shengqi, Zheng, Yujin, Balsamo, Domenico, Patkar, Sachin, Merchant, Farhad, Xia, Fei, Yakovlev, Alex, Shafik, Rishad
In-memory computing for Machine Learning (ML) applications remedies the von Neumann bottlenecks by organizing computation to exploit parallelism and locality. Non-volatile memory devices such as Resistive RAM (ReRAM) offer integrated switching and st
Externí odkaz:
http://arxiv.org/abs/2305.12914
Autor:
Singh, Simranjeet, Ghazal, Omar, Jha, Chandan Kumar, Rana, Vikas, Drechsler, Rolf, Shafik, Rishad, Yakovlev, Alex, Patkar, Sachin, Merchant, Farhad
Data movement costs constitute a significant bottleneck in modern machine learning (ML) systems. When combined with the computational complexity of algorithms, such as neural networks, designing hardware accelerators with low energy footprint remains
Externí odkaz:
http://arxiv.org/abs/2304.13552