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ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT Scalability
Publikováno v:
ECS Meeting Abstracts. :2092-2092
The downscaling of the device dimensions in Metal Oxide Semiconductor Transistors (MOSFET) has made necessary the introduction of the high-k metal gate stack. Nowadays, silicon as channel material in MOSFET devices itself is considered as limiting fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a69ca93900e5b0ecab942e54be12893
https://doi.org/10.1149/ma2014-02/44/2092
https://doi.org/10.1149/ma2014-02/44/2092
