Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sinan Osmanoglu"'
Autor:
Sinan Osmanoglu, Ekmel Ozbay
Publikováno v:
Electronics Letters, Vol 57, Iss 3, Pp 139-141 (2021)
Abstract For the first time, the effect of the gate structure on the kink phenomenon in S22 of the AlGaN/GaN HEMT is investigated in this study. To provide critical understanding into the S22 kink effect, the kink effect in S22 of the AlGaN/GaN HEMTs
Externí odkaz:
https://doaj.org/article/f46fc0c60b3346c59e349be2deae8931
Autor:
Ekmel Ozbay, Sinan Osmanoglu
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage Q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70cb3be2e0a878a507dd881e9866c98f
https://hdl.handle.net/11693/77367
https://hdl.handle.net/11693/77367
Autor:
Sinan Osmanoglu, Mustafa Ozturk, Ekmel Özbay, Salahuddin Zafar, Busra Cankaya, Dogan Yilmaz, A. Kashif
Publikováno v:
Proceedings of the 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020
Date of Conference: 14-18 January 2020 Conference Name: 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020 In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4d772012e75ecc9daf69ac1109d1aab
https://hdl.handle.net/11693/75713
https://hdl.handle.net/11693/75713
Autor:
Mustafa Kemal Öztürk, Sadan Ozcan, Omer Cengiz, Ahmet Toprak, Dogan Yilmaz, Ekmel Ozbay, Ozlem Sen, Sinan Osmanoglu, Bayram Butun
Publikováno v:
Semiconductor Science and Technology
This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, 125 μm gate width and 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67f50d078d96bd43a44cb7a010a790dc
https://doi.org/10.1088/1361-6641/aaebab
https://doi.org/10.1088/1361-6641/aaebab