Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sinan Goktepeli"'
Autor:
M. Jahanbani, Jon D. Cheek, N. Cave, S.j. Lian, Konstantin V. Loiko, Mehul D. Shroff, Chi-Hsi Wu, Stanley M. Filipiak, Xiang-Zheng Bo, H.C. Tuan, M. Azrak, Paul A. Grudowski, Wen-Jya Liang, Vance H. Adams, Sinan Goktepeli, Venkat R. Kolagunta, M. Foisy, John J. Hackenberg
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit desig
Autor:
Stanley M. Filipiak, Paul A. Grudowski, Brian J. Goolsby, Konstantin V. Loiko, M. Foisy, Venkat R. Kolagunta, D. Tekleab, Brian A. Winstead, Xiang-Zheng Bo, Sinan Goktepeli, Vance H. Adams
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes and Devices.
Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical d
Publikováno v:
ECS Meeting Abstracts. :568-568
not Available.