Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Sina Najmaei"'
Autor:
Eli R. Adler, Thy Doan Mai Le, Ibrahim Boulares, Robert Boyd, Yangchen He, Daniel Rhodes, Edward Van Keuren, Paola Barbara, Sina Najmaei
Publikováno v:
Nanomaterials, Vol 14, Iss 1, p 37 (2023)
Transition metal dichalcogenides (TMDs) have unique absorption and emission properties that stem from their large excitonic binding energies, reduced-dielectric screening, and strong spin–orbit coupling. However, the role of substrates, phonons, an
Externí odkaz:
https://doaj.org/article/2b7b6caa40744f49a70fb365600b4105
Autor:
Rajesh Kappera, Damien Voiry, Sibel Ebru Yalcin, Wesley Jen, Muharrem Acerce, Sol Torrel, Brittany Branch, Sidong Lei, Weibing Chen, Sina Najmaei, Jun Lou, Pulickel M. Ajayan, Gautam Gupta, Aditya D. Mohite, Manish Chhowalla
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 092516-092516-6 (2014)
Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as
Externí odkaz:
https://doaj.org/article/66979301f54b4aed9a106ec0cfe76d9c
Autor:
Sina Najmaei, Andreu L. Glasmann, Marshall A. Schroeder, Wendy L. Sarney, Matthew L. Chin, Daniel M. Potrepka
Publikováno v:
Materials Today. 59:80-106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6470801fcebd45768bf4363a72e9c31f
https://doi.org/10.1016/j.mattod.2022.08.017
https://doi.org/10.1016/j.mattod.2022.08.017
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::502a208f647457ebdea95192c7c5f1e8
https://doi.org/10.1109/edtm55494.2023.10103103
https://doi.org/10.1109/edtm55494.2023.10103103
Autor:
Wendy Sarney, Andreu L. Glasmann, Justin S. Pearson, Christine K. McGinn, Peter M. Litwin, Ravindra Singh Bisht, Shriram Ramanathan, Stephen J. McDonnell, Christina A. Hacker, Sina Najmaei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b0b9cca649bfd22bd0c67562b46afc
https://doi.org/10.2139/ssrn.4437893
https://doi.org/10.2139/ssrn.4437893
Autor:
Matt L. Chin, Sina Najmaei, Chinedu Ekuma, Katherine M. Price, Madan Dubey, Peter M. Wilson, James Hone, Theanne Schiros
Publikováno v:
Journal of Materials Chemistry C. 9:17437-17443
The ALD process of deposition of ultrathin high-κ HfO2 on chlorinate graphene.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02400e74e29585490d315e31542927bc
https://doi.org/10.1039/d1tc03502a
https://doi.org/10.1039/d1tc03502a
Publikováno v:
Materials Today. 39:110-117
Dynamic reconfigurability of material properties is essential to enabling innovative neuromorphic- and quantum-computing paradigms. The unique structure of van der Waals layers can facilitate a robust mechanism for this desired reconfigurability. Her
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26c574da3964233a66188badb0bca48
https://doi.org/10.1016/j.mattod.2020.04.030
https://doi.org/10.1016/j.mattod.2020.04.030
Autor:
Sina Najmaei, Chinedu Ekuma
Publikováno v:
ACS Applied Nano Materials. 3:7136-7142
The weak van der Waals (vdW) interactions and the unique interface that dominates layered 2D materials provide a powerful platform for materials engineering. The proximity effects in vdW heterostru...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3390ede7c541fc9201e8124c5b8c3b2d
https://doi.org/10.1021/acsanm.0c01465
https://doi.org/10.1021/acsanm.0c01465
Autor:
Aaron D. Franklin, Madan Dubey, Katherine Price, Robert A. Burke, Chinedu Ekuma, Sina Najmaei
Publikováno v:
ACS Applied Nano Materials. 2:4085-4094
As two-dimensional (2D) electronic devices continue to advance, the need for integrating high-quality, high-κ nanoscale dielectrics becomes more essential. Plasma-enhanced atomic layer deposition (...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f032ed68778ea3c6f7fb20e30b74423
https://doi.org/10.1021/acsanm.9b00505
https://doi.org/10.1021/acsanm.9b00505
Publikováno v:
Materials Today Communications. 19:383-392
The state-of-the-art heterostructure-based devices often involve stacks of epilayers of few nanometer thick crystals. However, the ultimate limit would be a hitherto single-atomic-layer structure. Using material-by-design approach, the flexibility of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdb2b5ba851e9772172f1f2b3f72a172
https://doi.org/10.1016/j.mtcomm.2019.03.005
https://doi.org/10.1016/j.mtcomm.2019.03.005