Zobrazeno 1 - 10
of 137
pro vyhledávání: '"Sin‐Hyung Lee"'
Publikováno v:
Materials, Vol 17, Iss 16, p 3962 (2024)
Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers exhibit unique physical properties, such as self-terminating surfaces, a direct bandgap, and near-unity photoluminescence (PL) quantum yield (QY), which make them attractive for e
Externí odkaz:
https://doaj.org/article/d2d44ef46eca457bb566251442a407a5
Publikováno v:
Advanced Science, Vol 11, Iss 9, Pp n/a-n/a (2024)
Abstract With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks
Externí odkaz:
https://doaj.org/article/0034b7924fc047feb4a0ba3a28d1ba09
Autor:
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Publikováno v:
Nanomaterials, Vol 14, Iss 5, p 466 (2024)
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial thr
Externí odkaz:
https://doaj.org/article/5e84f4fc6fef43b4afe2a5659348c1e3
Autor:
Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed an
Externí odkaz:
https://doaj.org/article/6a171702f7b849b0ad8648c30f07f5c0
Autor:
Hyeongwook Kim, Miseong Kim, Aejin Lee, Hea‐Lim Park, Jaewon Jang, Jin‐Hyuk Bae, In Man Kang, Eun‐Sol Kim, Sin‐Hyung Lee
Publikováno v:
Advanced Science, Vol 10, Iss 19, Pp n/a-n/a (2023)
Abstract Hardware neural networks with mechanical flexibility are promising next‐generation computing systems for smart wearable electronics. Several studies have been conducted on flexible neural networks for practical applications; however, devel
Externí odkaz:
https://doaj.org/article/2146babd6fd0430c8b702a3c4edf9e73
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 5, Pp n/a-n/a (2023)
Organic memristors are promising candidates for the flexible synaptic components of wearable intelligent systems. With heightened concerns for the environment, considerable effort has been made to develop organic transient memristors to realize eco
Externí odkaz:
https://doaj.org/article/ac2c38f7fb0c4b0b8ce0b6e18949cbaf
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 2, p 022001 (2024)
A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization u
Externí odkaz:
https://doaj.org/article/721c220c52d24f50a7f8056fad909413
Autor:
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, Jaewon Jang
Publikováno v:
ACS Omega, Vol 7, Iss 12, Pp 10262-10267 (2022)
Externí odkaz:
https://doaj.org/article/a20f6596003b4834b7fc4b45525c0c12
Autor:
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2432 (2023)
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage fo
Externí odkaz:
https://doaj.org/article/3c559ee45d1d4c4ca6f71fa563c4c53d
Autor:
Won Park, Jun-Hyeong Park, Jun-Su Eun, Jinuk Lee, Jeong-Hyeon Na, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Publikováno v:
Nanomaterials, Vol 13, Iss 15, p 2231 (2023)
The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-
Externí odkaz:
https://doaj.org/article/0367b8e7a0cb442a8fae25fb7b868b07