Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Simran, Shahi"'
Autor:
Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Anthony Cabanillas, Sichen Wei, Yu Fu, Anindita Chakravarty, Asma Ahmed, Joel Muhigirwa, Fei Yao, Huamin Li
Publikováno v:
Nano Express, Vol 4, Iss 3, p 035002 (2023)
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness. In this work, we investigated a van der Waals h
Externí odkaz:
https://doaj.org/article/39dfb55695264a23b0970df98f732ae3
Autor:
Sichen Wei, Yu Fu, Pinku Roy, Xiao Tong, Hongyan Yue, Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi, Yannick Iniatius Gata, Tony Butler, Huamin Li, Quanxi Jia, Fei Yao
Publikováno v:
ACS applied materialsinterfaces. 14(31)
As an inexpensive and naturally abundant two-dimensional (2D) material, molybdenum disulfide (MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b833c5aab093310638fd5f146b32e762
https://pubmed.ncbi.nlm.nih.gov/35913052
https://pubmed.ncbi.nlm.nih.gov/35913052
Autor:
Yu Fu, Chaoran Chang, Fei Yao, Hemendra Nath Jaiswal, Simran Shahi, Maomao Liu, Hua-Min Li, Anindita Chakravarty, Sichen Wei
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Two-dimensional (2D) semiconductors such as MoS 2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20fc3a8eeb5b0f40cf774c1e0b113121
https://doi.org/10.1109/iedm13553.2020.9371961
https://doi.org/10.1109/iedm13553.2020.9371961
Autor:
Maomao, Liu, Sichen, Wei, Simran, Shahi, Hemendra Nath, Jaiswal, Paolo, Paletti, Sara, Fathipour, Maja, Remškar, Jun, Jiao, Wansik, Hwang, Fei, Yao, Huamin, Li
Publikováno v:
Nanoscale. 12(33)
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5a6ac880342d4f11049b2969f817f8bd
https://pubmed.ncbi.nlm.nih.gov/32329484
https://pubmed.ncbi.nlm.nih.gov/32329484
Autor:
Paolo Paletti, Wan Sik Hwang, Maja Remškar, Hemendra Nath Jaiswal, Maomao Liu, Sichen Wei, Jun Jiao, Sara Fathipour, Hua-Min Li, Simran Shahi, Fei Yao
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ea316d4dccc36c74d38adbab363b9ce
http://arxiv.org/abs/2001.05105
http://arxiv.org/abs/2001.05105
Autor:
Hua-Min Li, Yu Fu, Simran Shahi, Jung Mu Lee, Cheng Yang, Maomao Liu, R. Dixit, Chaoran Chang, Ruiqiang Wang, Sichen Wei, Xiaochi Liu, Yutong Guo, Jihea Lee, Hemendra Nath Jaiswal, Anindita Chakravarty, Fei Yao
Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e0e77beaa208dd7a8706da8f5db7d7a
Publikováno v:
RSC Advances. 7:37310-37314
We demonstrate confinement of CVD grown MoS2 to a patterned graphene area, forming a vertically stacked 2D heterostructure. The CVD-grown graphene had been transferred onto a Si wafer and patterned using photolithography. Raman mapping and spectral a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::673c57fd4757d3b23709eb74db09aef0
https://doi.org/10.1039/c7ra07772f
https://doi.org/10.1039/c7ra07772f
Autor:
Sichen Wei, Seok Joon Yun, Maomao Liu, Hua-Min Li, Hemendra Nath Jaiswal, Licheng Xiao, Fei Yao, Young Hee Lee, Simran Shahi, Hyun Uk Kim
Publikováno v:
DRC
Monolayer MoS 2 with a direct and suitable bandgap and high flexibility make them fascinating building blocks for constructing novel nanostructures via a self-assembly process [1], [2]. In this work, we exploit liquid intercalation to activate the se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7b1dd74e70f9fe01cf2a4720474078
https://doi.org/10.1109/drc46940.2019.9046427
https://doi.org/10.1109/drc46940.2019.9046427
Autor:
Alan Seabaugh, Hua-Min Li, Wan Sik Hwang, Maja Remškar, Simran Shahi, Sara Fathipour, Maomao Liu
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3cf649d49b34ca6b860381be58e013
https://doi.org/10.1109/nmdc.2018.8605891
https://doi.org/10.1109/nmdc.2018.8605891
HfSe2 and ZrSe2 are newly discovered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) with promising properties for future nanoelectronics and optoelectronics. We theoretically revealed the electronic and optical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cbf520bbd8542b42b0a44a6ab9c719f