Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Simonian, D."'
Publikováno v:
Phys. Rev. B 60, R5093 (1999)
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial i
Externí odkaz:
http://arxiv.org/abs/cond-mat/9903179
Publikováno v:
Phys. Rev. Lett. 83, 2091 (1999)
In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer),
Externí odkaz:
http://arxiv.org/abs/cond-mat/9901005
Publikováno v:
Phys. Rev. B 59, R12740 (1999)
In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance is seen i
Externí odkaz:
http://arxiv.org/abs/cond-mat/9812389
In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition to an unexpected conducting phase in dilute high-mobility two-dimensi
Externí odkaz:
http://arxiv.org/abs/cond-mat/9812331
Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and
Externí odkaz:
http://arxiv.org/abs/cond-mat/9807259
For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $\Delta\sigma(H_{||},T)\equiv\sigma(H_{||},T)-\sigma(
Externí odkaz:
http://arxiv.org/abs/cond-mat/9712223
The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to full
Externí odkaz:
http://arxiv.org/abs/cond-mat/9709255
We note that data on Si/SiGe heterostructures, reported in the Comment of Ismail et al. (cond-mat/9707061) on our recent Letter (cond-mat/9608101), are insufficient to establish the claim for a transition to a metallic phase.
Comment: 1 page, no
Comment: 1 page, no
Externí odkaz:
http://arxiv.org/abs/cond-mat/9707097
Autor:
Sarachik, M. P., Simonian, D., Kravchenko, S. V., Bogdanovich, S., Dobrosavljevic, V., Kotliar, G.
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponen
Externí odkaz:
http://arxiv.org/abs/cond-mat/9706309
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the plane. The
Externí odkaz:
http://arxiv.org/abs/cond-mat/9704071