Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Simone Fiorentini"'
Autor:
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis
Externí odkaz:
https://doaj.org/article/cb96423893e34032855a31a74d44d3bf
Autor:
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 14, Iss 5, p 898 (2023)
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help
Externí odkaz:
https://doaj.org/article/55e4d69ae37746078a55b4c8e28b5b51
Autor:
Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 456-463 (2021)
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding
Externí odkaz:
https://doaj.org/article/ffd89c9f04be43b0a9e6e94e1013bb54
Autor:
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 12, Iss 4, p 443 (2021)
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a
Externí odkaz:
https://doaj.org/article/da720de6f4ad44a6895de672fbfaa807
Publikováno v:
ECS Transactions. 111:181-186
We compute the spin torque acting on elongated magnetic layers inrecently proposed ultra-scaled STT-MRAM devices. For thispurpose we evaluate the non-equilibrium spin accumulation bysolving the coupled spin and charge transport equations. This goesbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc28d91397384f6ebdc8e2dd6d109975
https://doi.org/10.1149/11101.0181ecst
https://doi.org/10.1149/11101.0181ecst
Autor:
Simone Fiorentini, Wilton Laciel Loch, Mario Bendra, Nils Petter Jorstad, Johannes Ender, Roberto Lacerda de Orio, Tomas Hadamek, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b2f1c36215d5a283bbf3c8a3b15633c
https://doi.org/10.1109/icsict55466.2022.9963202
https://doi.org/10.1109/icsict55466.2022.9963202
Autor:
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. De Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b21b569c075154e98007473b3318f15
https://doi.org/10.1109/essderc55479.2022.9947196
https://doi.org/10.1109/essderc55479.2022.9947196
Autor:
Roberto Lacerda de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
2022 IEEE Latin American Electron Devices Conference (LAEDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a6b6f3fa7fd74c38855269257d2a33
https://doi.org/10.1109/laedc54796.2022.9908222
https://doi.org/10.1109/laedc54796.2022.9908222
Publikováno v:
Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics.
Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b093db1a00925f80a4189c3a657158af
https://doi.org/10.54808/wmsci2022.02.12
https://doi.org/10.54808/wmsci2022.02.12
Autor:
Johannes Ender, Simone Fiorentini, Roberto Orio, Tomáš Hadámek, Mario Bendra, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b000ee9d400a647db067467e0a4e8bd
https://doi.org/10.1117/12.2624595
https://doi.org/10.1117/12.2624595