Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Simone Brizzi"'
Autor:
Dennis Lin, Stefan De Gendt, Claudia Fleischmann, Laura Nyns, Daniel Cuypers, Tsvetan Ivanov, Olivier Richard, Massimo Tallarida, Dieter Schmeißer, Dennis H. van Dorp, Simone Brizzi, Matthias Müller, Philipp Hönicke, Christoph Adelmann
Publikováno v:
ACS Applied Electronic Materials. 1:2190-2201
The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance–voltage measurements indicate that a (NH4)2S vapor pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5576fce1c49c1bf174d52f815fc814e3
https://doi.org/10.1021/acsaelm.9b00388
https://doi.org/10.1021/acsaelm.9b00388
Autor:
Hassan Gargouri, Simone Brizzi, Małgorzata Kot, Irina Kärkkänen, Jessica Schneidewind, Dieter Schmeißer, Franziska Naumann, Karsten Henkel, Chittaranjan Das
Publikováno v:
Surface and Coatings Technology. 324:586-593
A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium (TDMAT) and N2 plasma as well as titanium(IV)isopropoxide and NH3 plasma is reported. The compari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe80165a50004e937486cc675136054
https://doi.org/10.1016/j.surfcoat.2016.11.094
https://doi.org/10.1016/j.surfcoat.2016.11.094
Autor:
Karsten Henkel, Irina Kärkkänen, Franziska Naumann, Chittaranjan Das, Simone Brizzi, Hassan Gargouri, Malgorzata Sowinska, Jessica Schneidewind, Dieter Schmeißer
Publikováno v:
Applied Surface Science. 381:42-47
Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron radiation-based X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are used to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5b2da11f565b57d234938e1c6f2909
https://doi.org/10.1016/j.apsusc.2016.02.096
https://doi.org/10.1016/j.apsusc.2016.02.096
Publikováno v:
ECS Transactions. 75:145-153
Hafnium oxide (HfO2) is one of the most promising high-k replacement for the SiO2 gate dielectric in complementary metal–oxide–semiconductor (CMOS) devices because of its high dielectric constant and high thermal stability [1]. Besides the compat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5167aac5d3b6921157e288687be0d7a5
https://doi.org/10.1149/07506.0145ecst
https://doi.org/10.1149/07506.0145ecst
Autor:
Thierry Conard, Massimo Tallarida, Arne Billen, Simone Brizzi, Daniel Cuypers, Philipp Hönicke, Matthias Müller, Christoph Adelmann, Sven Van Elshocht, Dieter Schmeißer, Wilfried Vandervorst, Silvia Armini, Ravi Chandra Chintala, Claudia Fleischmann, Stefan De Gendt, Dennis H. van Dorp
Publikováno v:
Chemistry of Materials. 28:5689-5701
The use of sacrificial self-assembled monolayers (SAMs) to prepare clean n-type GaAs (100) surfaces without band bending in vacuo is demonstrated. GaAs surface passivation using octadecanethiol SAMs after HCl cleaning is shown to lead to an enhanceme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07ed5dac7ad39364dfbeb3cbb7538a9d
https://doi.org/10.1021/acs.chemmater.6b01732
https://doi.org/10.1021/acs.chemmater.6b01732
Autor:
Massimo Tallarida, Maarten Mees, Christoph Adelmann, Leonard Rodriguez, D. H. van Dorp, Daniel Cuypers, Sophia Arnauts, Thierry Conard, Simone Brizzi, S. De Gendt, Dieter Schmeisser
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N3016-N3022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6cde78dc69e3b7b775d2348cfad183e
https://doi.org/10.1149/2.005401jss
https://doi.org/10.1149/2.005401jss
Autor:
Dennis H. van Dorp, Dieter Schmeisser, Thierry Conard, Simone Brizzi, Massimo Tallarida, Sophia Arnauts, Daniel Cuypers, Stefan De Gendt, Christoph Adelmann, Leonard Rodriguez
Publikováno v:
ECS Transactions. 58:297-303
The influence of different wet chemical treatments (HCl, H₂SO₄, NH₄OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44db10f60cbd65eda505404921b38054
https://doi.org/10.1149/05806.0297ecst
https://doi.org/10.1149/05806.0297ecst
Autor:
Chang Seung Lee, Inge Asselberghs, Tomas Palacios, Jing Kong, Marc Heyns, Massimo Tallarida, Sven Van Elshocht, Amirhasan Nourbakhsh, Stefan De Gendt, Cedric Huyghebaert, Simone Brizzi, Dieter Schmeißer, Yi Song, Christoph Adelmann
Publikováno v:
Nanoscale. 7(24)
Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29dc7b52aeb417f3e86d86e142af9c30
https://pubmed.ncbi.nlm.nih.gov/26036353
https://pubmed.ncbi.nlm.nih.gov/26036353
Autor:
Simone Brizzi, Detlev Schulz, Jörg Haeberle, Dieter Schmeißer, Zbigniew Galazka, Pedro Barquinha, Diana Gaspar
Publikováno v:
Materials Research Express. 3:106302
We use resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, and O 1s absorption edges to report on the electronic properties of indium–gallium–zinc-oxide thin films. We also compare the data with the respective data of the correspondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cccec510df5203023a062741816f08b
https://doi.org/10.1088/2053-1591/3/10/106302
https://doi.org/10.1088/2053-1591/3/10/106302
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:01A117
The electronic structure of HfO2 thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7669c0f2d7a9a944662067d61c27c3
https://doi.org/10.1116/1.4935338
https://doi.org/10.1116/1.4935338