Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Simon Mendy"'
Publikováno v:
Energies, Vol 14, Iss 20, p 6834 (2021)
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho
Externí odkaz:
https://doaj.org/article/434b566e05ac4848bfad6ec9fd93f08b
Publikováno v:
Materials Science Forum. 1062:533-538
In high current applications that use several parallel-connected SiC MOSFETs (e.g., automotive traction inverters), optimal current sharing is integral to overall system reliability. Threshold voltage (VTH) variation in SiC MOSFETs is a prevalent rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93b7c03870b7f0cacdee7f281d260525
https://doi.org/10.4028/p-z4mz75
https://doi.org/10.4028/p-z4mz75
Autor:
Simon Mendy, Xiaoyun Rong, Oleksii Zinchenko, Amr Saleh, Mahdi Tousizadeh, Olayiwola Alatise, Philip Mawby, Mohamed Taha
Publikováno v:
2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::736592ed39b2e1702382528ace484fbe
https://doi.org/10.1109/cpere56564.2023.10119545
https://doi.org/10.1109/cpere56564.2023.10119545
Publikováno v:
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95e97fb3172ff4837d7d96401cbb68b
https://doi.org/10.1109/wipdaeurope55971.2022.9936268
https://doi.org/10.1109/wipdaeurope55971.2022.9936268
Autor:
Karen Forrest, Benjamin B Lindsey, Khristianne Greenhalgh, Mustapha Banda, Beate Kampmann, Papis Sanneh, Miriam Wathuo, Sheikh Jarju, Simon Mendy, Lamin Jammeh, Edrissa Jallow, Ghata Sowe, Yaya Bajinka, Ed Clarke, Bakary Camara, Stephen Owens, Alexandra Yates, Thushan I de Silva, Pa Omar Dahaba
Publikováno v:
Pediatric Infectious Disease Journal. 39:925-930
Knowledge regarding the prevalence, clinical features and etiology of pediatric influenza-like illness (ILI) remains limited in African settings. Furthermore, it is likely that many children presenting with ILI receive antibiotics unnecessarily. More
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebb70ae6c54c7b32e5fbde0a3f0e688d
https://doi.org/10.1097/inf.0000000000002761
https://doi.org/10.1097/inf.0000000000002761
Autor:
Sunday Nereus Agbo, Erfan Bashar, Ruizhu Wu, Simon Mendy, Jose Ortiz Gonzalez, Olayiwola Alatise
Using experimental measurements and finite element simulations, this paper investigates the failure mode of SiC Cascode JFETs under short circuit (SC) conditions. Unlike SiC MOSFETs, where failure results in a shorted gate-source terminal (resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97b8a54470106a7ba85adf03a88d1d2
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
Publikováno v:
Energies, Vol 14, Iss 6834, p 6834 (2021)
Wu, R, Mendy, S, Agbo, N, Gonzalez, J O, Jahdi, S & Alatise, O 2021, ' Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions ', Energies, vol. 14, no. 20, 6834 . https://doi.org/10.3390/en14206834
Energies; Volume 14; Issue 20; Pages: 6834
Wu, R, Mendy, S, Agbo, N, Gonzalez, J O, Jahdi, S & Alatise, O 2021, ' Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions ', Energies, vol. 14, no. 20, 6834 . https://doi.org/10.3390/en14206834
Energies; Volume 14; Issue 20; Pages: 6834
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0070370e53d0e368103aabd1d4a33284
https://www.mdpi.com/1996-1073/14/20/6834
https://www.mdpi.com/1996-1073/14/20/6834
Autor:
Erfan Bashar, Ruizhu Wu, Ortiz Gonzalez, Olayiwola Alatise, Simon Mendy, Saeed Jahdi, S.N. Agbo
Publikováno v:
Wu, R, Agbo, S N, Mendy, S, Bashar, E, Jahdi, S, Gonzalez, O & Alatise, O 2021, ' Measurement and simulation of short circuit current sharing under parallel connection : SiC MOSFETs and SiC Cascode JFETs ', Microelectronics Reliability, vol. 126, 114271 . https://doi.org/10.1016/j.microrel.2021.114271
Short-Circuit (SC) current sharing in parallel connected SiC MOSFETs and SiC Cascode JFETs have been investigated using experimental measurements and finite element models. Device parametric variation between parallel devices contributes to uneven cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c13032fbf413d9f8c51311b74ea4555
https://doi.org/10.1016/j.microrel.2021.114271
https://doi.org/10.1016/j.microrel.2021.114271