Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Simon M. Jang"'
Autor:
Quang Ho Luc, Ching-Ting Lee, S.P. Wang, Yueh Chin Lin, Hong Quan Nguyen, Carlos H. Diaz, Edward Yi Chang, Yu Sheng Chiu, Simon M. Jang, Chun-Hsiung Lin, Hai Dang Trinh, Hui-Chen Chang
Publikováno v:
IEEE Transactions on Electron Devices. 60:1555-1560
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d56b07213a5e70de1222526acf5c5a87
https://doi.org/10.1109/ted.2013.2254119
https://doi.org/10.1109/ted.2013.2254119
Autor:
Edward Yi Chang, Yueh Chin Lin, Simon M. Jang, Carlos H. Diaz, Ting Wei Chuang, Parhat Ahmet, Hui Chen Chang, Chun Hsiung Lin, Hai Dang Trinh, Kuniyuki Kakushima, Hiroshi Iwai
Publikováno v:
IEEE Electron Device Letters. 34:1229-1231
In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3(0.8 nm)/HfO2(0.8 nm) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2659257b1c4f50451735dcf5a61b6e4
https://doi.org/10.1109/led.2013.2272083
https://doi.org/10.1109/led.2013.2272083
Autor:
Chein-Hao Chen, Yean-Kuen Fang, Chih-Wei Yang, Shyh-Fann Ting, Yong-Shiuan Tsair, Ming-Fang Wang, Tuo-Hong Huo, Mo-Chiun Yu, Shih-Chang Chen, Jang, Simon M., Yu, Douglas C.H., Mong-Song Liang
Publikováno v:
IEEE Transactions on Electron Devices; Dec2001, Vol. 48 Issue 12, p2769, 8p, 2 Diagrams, 6 Charts
Autor:
Yang, Kuo-Nan, Huang, Huan-Tsung
Publikováno v:
IEEE Transactions on Electron Devices; Nov2000, Vol. 47 Issue 11, p2161, 6p, 10 Black and White Photographs, 3 Diagrams, 6 Graphs
Autor:
Lin, Yueh Chin, Trinh, Hai Dang, Chuang, Ting Wei, Iwai, Hiroshi, Kakushima, Kuniyuki, Ahmet, Parhat, Lin, Chun Hsiung, Diaz, Carlos H., Chang, Hui Chen, Jang, Simon M., Chang, Edward Yi
Publikováno v:
IEEE Electron Device Letters; Oct2013, Vol. 34 Issue 10, p1229-1231, 3p