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pro vyhledávání: '"Simon K, Moser"'
Autor:
Shruti, Subramanian, Quinn T, Campbell, Simon K, Moser, Jonas, Kiemle, Philipp, Zimmermann, Paul, Seifert, Florian, Sigger, Deeksha, Sharma, Hala, Al-Sadeg, Michael, Labella, Dacen, Waters, Randall M, Feenstra, Roland J, Koch, Chris, Jozwiak, Aaron, Bostwick, Eli, Rotenberg, Ismaila, Dabo, Alexander W, Holleitner, Thomas E, Beechem, Ursula, Wurstbauer, Joshua A, Robinson
Publikováno v:
ACS nano. 14(12)
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::419ab98efd287ac1621a21df4da8cb21
https://pubmed.ncbi.nlm.nih.gov/33196167
https://pubmed.ncbi.nlm.nih.gov/33196167
