Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Simon Jang"'
Autor:
Simon Jang, L. T. Wang, J. Wu, Ming-Han Liao, T.-L. Lee, P. R. Jeng, J. C. Lu, Ling-Yen Yeh, Ming-Hua Yu
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
Strained-Si technology is the Holy Grail for present semiconductor industry and is used extensively to boost the device performance, recently. However, the limitation of strained-Si technology has greatly perplexed us and need to investigate in detai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::674a91a854b4ab40537893b1f829cd88
https://doi.org/10.1109/vtsa.2009.5159277
https://doi.org/10.1109/vtsa.2009.5159277
Autor:
David Tsui, Chris Young, C. L. Lin, Wallas Chen, Damian Chen, Ellis Chang, M. S. Liang, P. R. Jeng, Simon Jang, Henry Chen
Publikováno v:
SPIE Proceedings.
In the early development stage of 32nm processes, identifying a nd isolating systematic defects is critical to understanding the issues related to design and process interactions. Conventional inspection methodologies using random review sa mpling on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac32424ebbe73bf47647510ad3d69a90
https://doi.org/10.1117/12.804526
https://doi.org/10.1117/12.804526
Autor:
David W. Gidley, M.S. Liang, Jianing Sun, J. T. Wetzel, Simon Jang, E. Todd Ryan, Douglas Yu, S. Lin, K.A. Monnig
Publikováno v:
MRS Proceedings. 686
Positron Annihilation Lifetime Spectroscopy (PALS) (1, 2) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench side
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd34261462ff3241285e908de1a0cce
https://doi.org/10.1557/proc-686-a9.7
https://doi.org/10.1557/proc-686-a9.7
Publikováno v:
Taiwan Semiconductor Manufacturing Company Limited MarketLine Company Profile. 9/23/2024, p1-44. 44p.
Publikováno v:
Journal of The Electrochemical Society. 148:G159
In this paper, we introduce a mathematical model for chemical mechanical polishing ~CMP! of reverse tone etchback shallow trench isolation ~STI! structures. We present a detailed formulation of the model and describe CMP experiments using a newly des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d07fe5abf5284943196a19aaaf6e84f6
https://doi.org/10.1149/1.1348266
https://doi.org/10.1149/1.1348266
Publikováno v:
Taiwan Semiconductor Manufacturing Company Limited MarketLine Company Profile. 11/22/2023, p1-43. 43p.
Publikováno v:
Taiwan Semiconductor Manufacturing Company Limited MarketLine Company Profile. 11/23/2022, p1-42. 42p.
Publikováno v:
Taiwan Semiconductor Manufacturing Company Limited MarketLine Company Profile. 10/20/2021, p1-40. 40p.
Publikováno v:
Journal of Park & Recreation Administration. 2019, Vol. 37 Issue 1, p124-134. 11p. 3 Charts, 4 Maps.
Publikováno v:
Taiwan Semiconductor Manufacturing Company Limited MarketLine Company Profile. 10/23/2020, p1-38. 38p.