Výsledky vyhledávání - "Simon J. Fang"

On-line patterned wafer thickness control of chemical-mechanical polishing

Autor: Duane S. Boning, Taber H. Smith, Stephanie W. Butler, Simon J. Fang, Jerry A. Stefani, Greg B. Shinn

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1384-1390

We present a gauge study of an on-line metrology system for chemical-mechanical polishing and a 600 wafer run by run (RbR) control experiment enabled by on-line wafer measurement. The variability, reliability, and accuracy of the on-line metrology sy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2f2496e537975c9def2eb36bd913515
https://doi.org/10.1116/1.581824

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Control of Polysilicon Surface Topography in a High Selectivity Chemical Mechanical Polishing Process

Autor: Elisa U, Scott Steckenrider, Simon J. Fang, Hal Edwards, Vladimir A. Ukraintsev

Publikováno v: Journal of The Electrochemical Society. 146:1158-1162

Characterization of a high selectivity polysilicon chemical mechanical polishing (CMP) is studied in this report. The process is developed for the fabrication of two-dimensional secondary ion mass spectrometry (2D SIMS) test chip, in which a silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::861fd5ae366a1eb6b963ce097b2cb4cd
https://doi.org/10.1149/1.1391738

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Analysis of interface roughness’s effect on metal–oxide–semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope images

Autor: C. R. Helms, Heng Chih Lin, J. F. Ying, Toshiyaki Yamanaka, Simon J. Fang

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:790-796

For the first time, metal–oxide–semiconductor interface atomic force microscope images were used to directly calculate the Fowler-Nordheim tunneling behavior for thin gate oxides with different interface roughness. Assuming that the roughness is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dadf82358a633e6e9a0c5e7f536c1aa5
https://doi.org/10.1116/1.580709

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Correlation between inversion layer mobility and surface roughness measured by AFM

Autor: C. R. Helms, Simon J. Fang, T. Yamanaka, John P. Snyder, Heng-Chih Lin

Publikováno v: IEEE Electron Device Letters. 17:178-180

The correlation between inversion layer mobility of MOSFET's and surface micro-roughness of the channel has been studied using split CV measurements and AFM analysis. The mobility at high normal field decreases with increasing the surface roughness o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::edf8d79450794d59bf103c391448cc80
https://doi.org/10.1109/55.485166

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The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

Autor: Kwame N. Eason, C. R. Helms, Edwin C. Kan, Heng Chih Lin, Simon J. Fang, Toshiaki Yamanaka

Publikováno v: MRS Proceedings. 473

For future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6eb13bef317b5ada25fef1b03a316563
https://doi.org/10.1557/proc-473-175

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Analyzing Atomic Force Micrographs Using Spectral Methods

Autor: C. R. Helms, Simon J. Fang, Heng-Chih Lin, Sameer Halepete

Publikováno v: MRS Proceedings. 386

Microroughness is a critical parameter in ULSI device interface reliability and has been shown to effect several critical MOS electrical properties. The atomic force microscope (AFM) has become the instrument of choice for silicon surface microroughn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36cec763addbd824c27935da8bb23ea6
https://doi.org/10.1557/proc-386-383

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Optimization of the Chemical Mechanical Polishing Process for Premetal Dielectrics

Autor: Santos Garza, Greg B. Shinn, John E. Campbell, Michelle L. Hartsell, Honglin Guo, Simon J. Fang, Taber H. Smith

Publikováno v: Journal of The Electrochemical Society. 147:682

Since a premetal dielectric (PMD) is used in the first level of interconnects, tight control of the critical dimension of the subsequent first-level contact is essential. The thickness nonuniformity due to PMD chemical mechanical polishing (CMP) can

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd6cb5c074e90f88e5bb919da50a6b6d
https://doi.org/10.1149/1.1393253

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