Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Simon Hertenberger"'
Autor:
Daniel Rudolph, Lucas Schweickert, Stefanie Morkötter, Lukas Hanschke, Simon Hertenberger, Max Bichler, Gregor Koblmüller, Gerhard Abstreiter, Jonathan J Finley
Publikováno v:
New Journal of Physics, Vol 15, Iss 11, p 113032 (2013)
Time resolved and time-integrated photoluminescence (PL) spectroscopy is used to investigate the trapping and thermal activation dynamics of excitons bound to single twin defects in individual GaAs–AlGaAs core–shell nanowires. The GaAs core exhib
Externí odkaz:
https://doaj.org/article/6b2fc2d589974d9a811b4a5dce8a9c5a
Publikováno v:
Solar Energy. 96:220-226
Composites of TiO 2 and Ag nanoparticles were used to study photodegradation of aqueous Rhodamine B under natural sunlight exposure. The addition of Ag powder resulted in a ∼45% increase of the photocatalytic activity of TiO 2 after 30 min, which i
Autor:
Sara Mangialardo, Gregor Koblmüller, Nicolas G. Hörmann, Simon Hertenberger, Stefan Funk, Sara Yazji, Gerhard Abstreiter, Stefanie Morkötter, Paolo Postorino, Ilaria Zardo
Publikováno v:
Nano Letters, 13(7), 3011-3016. American Chemical Society
We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimut
Autor:
Gregor Koblmüller, Danĉe Spirkoska, Max Bichler, Jonathan J. Finley, Watcharapong Paosangthong, Daniel Rudolph, Stefanie Bolte, Simon Hertenberger, Gerhard Abstreiter, Markus Döblinger
Publikováno v:
Nano Letters. 11:3848-3854
We identify a new noncatalytic growth regime for molecular beam epitaxially grown GaAs nanowires (NWs) that may provide a route toward axial heterostructures with discrete material boundaries and atomically sharp doping profiles. Upon increase of the
Autor:
Ilaria Zardo, Paolo Postorino, Simon Hertenberger, Gregor Koblmüller, Stefanie Morkötter, Sara Yazji, Gerhard Abstreiter
Publikováno v:
Journal of physics. Condensed matter
26 (2014). doi:10.1088/0953-8984/26/23/235301
info:cnr-pdr/source/autori:Yazji, Sara; Zardo, Ilaria; Hertenberger, Simon; Morktter, Stefanie; Koblmueller, Gregor; Abstreiter, Gerhard; Postorino, Paolo/titolo:Pressure dependence of Raman spectrum in InAs nanowires/doi:10.1088%2F0953-8984%2F26%2F23%2F235301/rivista:Journal of physics. Condensed matter (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:26
26 (2014). doi:10.1088/0953-8984/26/23/235301
info:cnr-pdr/source/autori:Yazji, Sara; Zardo, Ilaria; Hertenberger, Simon; Morktter, Stefanie; Koblmueller, Gregor; Abstreiter, Gerhard; Postorino, Paolo/titolo:Pressure dependence of Raman spectrum in InAs nanowires/doi:10.1088%2F0953-8984%2F26%2F23%2F235301/rivista:Journal of physics. Condensed matter (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:26
We report on a Raman scattering experiment under high pressure on InAs nanowires with mainly wurtzite crystal structure. The dependence of the phonon modes on applied pressure due to the modification of the lattice parameters has been determined alon
Autor:
Markus Döblinger, Stefanie Morkötter, Gerhard Abstreiter, Andreas Brenneis, J. Treu, Jan Overbeck, Simon Hertenberger, Alexander W. Holleitner, Gregor Koblmüller, Jonathan J. Finley
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23ca0dc222e01e9d595098fa64c55817
Autor:
Giuseppe Scarpa, Gerhard Abstreiter, Ilaria Zardo, Stefanie Morkötter, Max Bichler, Stefan Funk, Mengyu Liang, Simon Hertenberger, Daniel Rudolph, Gregor Koblmüller, A. Yadav, Markus Döblinger, J. Treu, J. Becker, Paolo Lugli, Jonathan J. Finley
Publikováno v:
Physical Review B. 87
Accessing fundamental structure-property correlations in ternary semiconductor nanowires is a challenging endeavor often limited by large compositional inhomogeneities. Here, we investigate strongly periodic In 1−x Ga x As nanowire arrays grown on
Autor:
Lucas Schweickert, Gerhard Abstreiter, Ilaria Zardo, Sonja Matich, Danĉe Spirkoska, Daniel Rudolph, Max Bichler, J. Becker, Stefanie Morkötter, Jonathan J. Finley, Gregor Koblmüller, Markus Döblinger, Stefan Funk, Simon Hertenberger
Publikováno v:
Nano letters. 13(4)
By employing various high-resolution metrology techniques we directly probe the material composition profile within GaAs-Al0.3Ga0.7As core-shell nanowires grown by molecular beam epitaxy on silicon. Micro Raman measurements performed along the entire
Autor:
Martin Bichler, Gregor Koblmüller, Simon Hertenberger, Gerhard Abstreiter, Jonathan J. Finley, J. Becker, Daniel Rudolph
Publikováno v:
Nanotechnology. 23(23)
We identify the entire growth parameter space and rate-limiting mechanisms in non-catalytic InAs nanowires (NWs) grown by molecular beam epitaxy. Surprisingly huge growth temperature ranges are found with maximum temperatures close to ∼600 °C upon
Autor:
Ilaria Zardo, Nicolas G. Hörmann, Simon Hertenberger, Stefan Funk, Markus Döblinger, Gregor Koblmüller, S. Bolte, Gerhard Abstreiter
Publikováno v:
Physical Review B. 84
The optical phonon properties of single InAs nanowires and their relation to the crystal structure are studied by means of Raman spectroscopy. The nanowires were grown by molecular beam epitaxy on Si (111) without foreign catalyst and exhibit variati