Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Autor: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

Publikováno v: Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)

Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device

Externí odkaz: https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b

Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

Autor: Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Yves N. Sama, Thi Huong Ngo, Tarik Moudakir, Gilles Patriarche, Simon Gautier, Paul L. Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden

Publikováno v: Advanced Materials Technologies.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c1c8f1c18e1a0ba1542b28035f79a8c
https://doi.org/10.1002/admt.202300147

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Autor: Tarik Moudakir, Suresh Sundaram, Paul L. Voss, Simon Gautier, Phuong Vuong, Stefano Leone, Fouad Benkhelifa, Jean-Paul Salvestrini, Adama Mballo, Abdallah Ougazzaden, Gilles Patriarche, Soufiane Karrakchou

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (49), pp.55460-55466. ⟨10.1021/acsami.0c16850⟩

International audience; Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::537580ba2a77366096d2d4edd858ea5c
https://doi.org/10.1021/acsami.0c16850

Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Autor: Paul L. Voss, Abdallah Ougazzaden, Simon Gautier, Tarik Moudakir, Ali Ahaitouf, Gilles Patriarche, Phuong Vuong, Jean-Paul Salvestrini, Adama Mballo, Ashutosh Srivastava, Suresh Sundaram

Publikováno v: Gallium Nitride Materials and Devices XVI
Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, 11686, SPIE, pp.39, 2021, ⟨10.1117/12.2584985⟩

International audience; Combined photonic and electronic systems require diverse devices to be co-integrated on a common platform. This heterogeneous integration is made possible through several separation and transfer methods where the functioning e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8543e74ff5adea7c83195dcead7edf9f
https://hal.archives-ouvertes.fr/hal-03350528

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Autor: Simon Gautier, Soufiane Karrakchou, Ali Ahaitouf, Phuong Vuong, Tarik Moudakir, Gilles Patriarche, Rajat Gujrati, Ashutosh Srivastava, Suresh Sundaram, Thierry Leichle, Taha Ayari, Adama Mballo, Jean-Paul Salvestrini, Paul L. Voss, Abdallah Ougazzaden

Publikováno v: Scientific Reports
Scientific Reports, Nature Publishing Group, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)

Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c30b58cd28efa93dbcc9ccc4c17ef030
https://hal.archives-ouvertes.fr/hal-03120983